Cation-disorder-enhanced magnetization in pulsed-laser-deposited CuFe2O4 films

Yang, Aria; Chen, Zhao; Zuo, Xu; Arena, D. A.; Kirkland, J. P.; Vittoria, C.; Harris, Vincent G.

doi:10.1063/1.1952571

Cited by 41 publications

(25 citation statements)

References 12 publications

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“…The origin of the strain in the sputtered films may be related to several factors, including voids, argon inclusions, and film substrate mismatch. 13 The strain reduces with increase in Ar pressure and the cell parameter approaches the bulk value of 8.41 Å. With increase in Ar gas pressure, the phase collision increases reducing the kinetic energy of sputtered neutral atoms and consequently decreasing the incident kinetic energy leading to decrease in strain.…”

Section: Methodsmentioning

confidence: 97%

Crystal structure and magnetic properties of rf-sputtered Cu–Zn ferrite thin films

Sultan

Singh

2010

Journal of Applied Physics

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Cu–Zn ferrite (Cu0.6Zn0.4Fe2O4) thin films were deposited using rf-magnetron sputtering on glass substrates at room temperature in pure Ar gas environment. The influence of variation in Ar gas pressure between 5 and 15 mT on the crystal structure and magnetization has been studied. The XRD patterns show single phase nanocrystalline spinel structure with cubic symmetry. The AFM images also confirm the nanocrystalline nature of the films. The magnetization increases with increase in Ar gas pressure. The change in the crystal structure and magnetization has been explained in view of freezing of some Cu-ions on tetrahedral A-sites and equivalent number of Fe ions on octahedral B-sites during the deposition process due to high deposition rate in pure Ar environment. Furthermore, the deposition in reducing (argon) atmosphere may lead to the formation of Cu+ ions that prefer occupation of the smaller four-coordinated A-site in the spinel structure and displace Fe3+ cations to occupy the B-sites. The formation of Fe2+ cannot be ruled out in the spinel structure where a fraction of Fe3+ will be replaced by Fe2+ ions.

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Section: Methodsmentioning

confidence: 97%

Crystal structure and magnetic properties of rf-sputtered Cu–Zn ferrite thin films

Sultan

Singh

2010

Journal of Applied Physics

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“…7,8 Due to the success of Yang et al in tailoring the cation distribution in the Cuferrite system, we were encouraged that the same could be done for the Ni-ferrite system. 9 In this paper, we present the processing details, structure, and magnetic properties of as-produced and postdeposition annealed Ni-ferrite films deposited by pulsed laser ablation deposition ͑PLD͒ technique onto single crystals of ͑100͒ and ͑111͒ magnesium oxide ͑MgO͒ substrates. All films were grown at a fixed oxygen pressure of 5 mTorr at different substrate temperatures.…”

Section: Introductionmentioning

confidence: 99%

Effect of growth temperature on the magnetic, microwave, and cation inversion properties on NiFe2O4 thin films deposited by pulsed laser ablation deposition

Chinnasamy

Yoon

Yang

et al. 2007

Journal of Applied Physics

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First principles band structure calculations suggest that the preferential occupation of Ni2+ ions on the tetrahedral sites in NiFe2O4 would lead to an enhancement of the exchange integral and subsequently the Néel temperature and magnetization. To this end, we have deposited NiFe2O4 films on MgO substrates by pulsed laser deposition. The substrate temperature was varied from 700to900°C at 5mTorr of O2 pressure. The films were annealed at 1000°C for different times prior to their characterization. X-ray diffraction spectra showed either (100) or (111) orientation with the spinel structure dependent on the substrate orientation. Magnetic studies showed a magnetization value of 2.7kG at 300K. The magnetic moment was increased to the bulk value as a result of postdeposition annealing at 1000°C. The as produced films show that the ferromagnetic resonance linewidth at 9.61GHz was 1.5kOe, and it was reduced to 0.34kOe after postannealing at 1000°C. This suggests that the annealing led to the redistribution of Ni2+ ions to their equilibrium octahedral sites. Further, it is shown that the magnetically preferred direction of Ha can be aligned perpendicular to the film plane when films are grown with a fixed oxygen pressure of 5mTorr for films deposited at 700 and 900°C.

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“…Another important issue is related to cation disorder or a mixture of various cation valences that can occur during the growth of spinel films [41][42][43][44][45][46] and if present it may potentially destroy the expected normal spinel stacking patterns. Thus, it fine multiplet features) almost identical to those of the CCO bulk samples implying the absence of any detectable cation distribution disorder or mixture of chemical valences.…”

Section: Geometrically Frustrated Latticesmentioning

confidence: 99%

Geometrical lattice engineering of complex oxide heterostructures: a designer approach to emergent quantum states

et al. 2016

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Epitaxial heterostructures composed of complex oxides have fascinated researchers for over a decade as they offer multiple degrees of freedom to unveil emergent many-body phenomena often unattainable in bulk. Recently, apart from stabilizing such artificial structures along the conventional [001]-direction, tuning the growth direction along unconventional crystallographic axes has been highlighted as a promising route to realize novel quantum many-body phases. Here we illustrate this rapidly developing field of geometrical lattice engineering with the emphasis on a few prototypical examples of the recent experimental efforts to design complex oxide heterostructures along the (111) orientation for quantum phase discovery and potential applications.

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Cation-disorder-enhanced magnetization in pulsed-laser-deposited CuFe2O4 films

Cited by 41 publications

References 12 publications

Crystal structure and magnetic properties of rf-sputtered Cu–Zn ferrite thin films

Crystal structure and magnetic properties of rf-sputtered Cu–Zn ferrite thin films

Effect of growth temperature on the magnetic, microwave, and cation inversion properties on NiFe2O4 thin films deposited by pulsed laser ablation deposition

Geometrical lattice engineering of complex oxide heterostructures: a designer approach to emergent quantum states

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