Cathodoluminescence of annealed cubic boron nitride

Зайцев, А.М.; Shipilo, V. B.; Shishonok, E. M.; Melnikov, Alexander

doi:10.1002/pssa.2210950152

Cited by 8 publications

(9 citation statements)

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“…The calculated ZPL of 1.61 eV is well consistent with the experiment observed value of GC-2 (1.63 eV) in BN. [34] These results indicate that the center in the h-BN monolayer provides more degrees of freedom for the spin manipulation.…”

Section: Resultsmentioning

confidence: 88%

A paramagnetic neutral CBVN center in hexagonal boron nitride monolayer for spin qubit application

Cheng

Zhang

Yan

et al. 2017

Computational Materials Science

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First-principles calculations in combination with group theory analyses were employed to study the spin-polarized electronic structures of C B V N centers consisting of a nitrogen vacancy and a substitutional carbon atom in hexagonal boron nitride (h-BN) monolayer with different charge states.It is clarified that the paramagnetic neutral C B V N center is stable in the n-type h-BN monolayer. The neutral defect center possesses a triplet (S=1) ground state and with two spin-conserved optical vertical transition. Its spin coherence time is estimated to be 3.9 ms at T = 0 K by a simple scheme combining the mean-field theory and the first-principles calculations. The results indicate that the neutral C B V N center is very suitable for achieving spin qubit.

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Section: Resultsmentioning

confidence: 88%

A paramagnetic neutral CBVN center in hexagonal boron nitride monolayer for spin qubit application

Cheng

Zhang

Yan

et al. 2017

Computational Materials Science

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“…Based on the hypothetical nature of the optical transitions at these centers, the overall results of luminescent studies of cBN show considerable similarity to diamond. Thus in the luminescence spectra of cBN, the predominant bands are from centers in which the electronic transitions are intracenter transitions [3][4][5][6]. The BN1 center observed in cBN [7] has a very complicated spectrum which structurally is absolutely identical to the spectrum of the 3.188 eV center in diamond.…”

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confidence: 99%

“…No optically active impurity defects have been introduced into cBN by ion implantation. Known radiation defects are RC1-RC4, C, and BN1, formed in cBN due to bombardment with electrons and ion implantation [3,4,7,13].…”

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confidence: 99%

Luminescence centers in cubic boron nitride

Shishonok

2007

J Appl Spectrosc

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Complex and multiband photoluminescence spectra for GB and HBN centers in single crystals of cubic boron nitride (cBN) were recorded in the wavelength ranges 385-400 nm and 365-395 nm and the nature of these centers was studied. The use of models involving resonance vibrations and strongly shifted configuration diagrams for the electronic ground state and excited state made it possible to associate formation of the GB-1 center with the presence of tungsten impurity in cBN. It was established that the HBN band in the 300-350 nm range of the cathodoluminescence spectra of cBN polycrystals, single crystals, and micropowders is associated with luminescence centers present in microinclusions of graphite-like boron nitride (hBN). The nature of the hBN band is tentatively interpreted within the model of recombination of donor and acceptor defects in hBN: respectively nitrogen vacancies and carbon atoms in positions substituting for nitrogen.Key words: cubic boron nitride, photoluminescence, cathodoluminescence, nature of optically active defects, luminescence center, spectrum with complex structure, resonance vibrations, configuration diagram.Introduction. Cubic boron nitride (cBN), as a wide-gap semiconductor, is a promising material for use in electronics and optoelectronics, detectors and devices suitable for operation under high radiation and temperature conditions and also in chemically aggressive media. Since the defect and impurity structure of cBN has not been well studied, it should be quite effective to analyze it by luminescence correlated with the macroscopic characteristics of the material, taking into account the indicated practical applications.From the standpoint of basic research on cBN, of course, direct analysis of the nature of the optical transitions at the luminescence centers in cBN is of interest, including comparison with its closest Group III-Group V analogs: diamond and gallium nitride.Thus in the luminescence spectra of gallium nitride, we observe a sufficient number of features of a type associated with donor-acceptor recombination or with recombination on free or bound excitons [1]. Of course, in the indicated cases, oppositely charged impurities or defects are present simultaneously in GaN which are introduced into the material by doping or are present in the material as intrinsic defects. Effective doping of diamond is difficult, and obtaining diamond with n-type conductivity is problematic. This is explained by the lack of luminescence centers of the above-indicated type in diamond [2] and formation of many defects in diamond such that electronic transitions in them are intracenter transitions.The number of luminescence centers in cBN that have been detected so far is small compared with diamond and GaN, and only isolated centers have been thoroughly studied. Based on the hypothetical nature of the optical transitions at these centers, the overall results of luminescent studies of cBN show considerable similarity to diamond. Thus in the luminescence spectra of cBN, the predominant bands...

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“…Following irradiation, three additional zero-phonon line peaks in the emission spectra have been observed: RC1 (546 nm), RC2 (577 nm) and RC3 (623nm). These spectral features have been tentatively assigned to neutral or charged N vacancies [10][11][12], or vacancy complexes involving C or O [9]. It is clear alternative methods are required to identify defects in cBN.…”

Section: Introductionmentioning

confidence: 98%

Theoretical and experimental investigation of point defects in cubic boron nitride

et al. 2017

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Cubic boron nitride (cBN) is a synthetic wide band gap material that has attracted attention due to its high thermal conductivity, optical transparency and optical emission. In this work, defects in cBN have been investigated using experimental and theoretical X-ray absorption near edge structure (XANES). Vacancy and O substitutional defects were considered, with O substituted at the N site (O N ) to be the most energetically favorable. All defects produce unique signatures in either the B or N K-edges and can thus be identified using XANES. The calculations coupled with electron-irradiation / annealing experiments strongly suggest that O N is the dominant defect in irradiated cBN and remains after annealing. This defect is a likely source of optical emission in cBN.

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Cathodoluminescence of annealed cubic boron nitride

Cited by 8 publications

References 1 publication

A paramagnetic neutral CBVN center in hexagonal boron nitride monolayer for spin qubit application

A paramagnetic neutral CBVN center in hexagonal boron nitride monolayer for spin qubit application

Luminescence centers in cubic boron nitride

Theoretical and experimental investigation of point defects in cubic boron nitride

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