Cathodoluminescence

Yacobi, B. G.; Holt, D. B.

doi:10.1007/978-1-4757-9595-0_4

Cited by 37 publications

(40 citation statements)

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“…Because the CL intensity is proportional to the concentration of e-h pairs generated and recombining in the probed region, variations in the CL intensity are expected to result from variations in the probed defect depth or thickness. 9 Therefore we can recognize defects 1-5 as thin planar defects embedded within the basal plane ͑0001͒ 4H-SiC matrix. The fairly uniform CL imaging contrast of defect 6 indicates the presence of a rather three-dimensional ͑3D͒ 3C inclusion inclined 8°in the basal plane.…”

Section: Cathodoluminescence Study Of the Properties Of Stacking Faulmentioning

confidence: 99%

“…5 In addition, the position of the electron beam along the SFs was adjusted so that the maximum in the distribution of generated carriers occurred at the depth of SF, which is approximately 41% of the electron penetration depth. 9 This approach ensures similar injection conditions for all studied defects. The RT CL spectra of the selected SFs exhibited broad emission bands with peaks at 422, 461, 481, 500, and 550 nm, which correspond to the different colors appearing in the real-color CL image depicted in Fig.…”

Section: Cathodoluminescence Study Of the Properties Of Stacking Faulmentioning

confidence: 99%

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Cathodoluminescence study of the properties of stacking faults in 4H-SiC homoepitaxial layers

Maximenko

Freitas

Klein

et al. 2009

Applied Physics Letters

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In-grown stacking faults in n-type 4H-SiC epitaxial layers have been investigated by real-color cathodoluminescence imaging and spectroscopy carried out at room and liquid helium temperatures. Stacking faults with 8H stacking order were observed, as well as double layer and multilayer 3C-SiC structures and a defect with an excitonic band gap at 2.635 eV. It was found that 8H stacking faults and triangular surface defects can be generated from similar nucleation sources. Time-resolved measurements reveal that compared to defect-free regions, the carrier lifetimes are severely reduced by the presence of stacking faults corresponding to triangular surface defects and three-dimensional 3C-SiC inclusions.

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Section: Cathodoluminescence Study Of the Properties Of Stacking Faulmentioning

confidence: 99%

Section: Cathodoluminescence Study Of the Properties Of Stacking Faulmentioning

confidence: 99%

Cathodoluminescence study of the properties of stacking faults in 4H-SiC homoepitaxial layers

Maximenko

Freitas

Klein

et al. 2009

Applied Physics Letters

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“…This incoherent CL emission has been known for decades and is used in the study of optically active semiconductors, quantum dots, lanthanide ions, and radiative point defects in materials. 6 As the secondary electron cloud is much larger in size than the primary electron beam, the spatial resolution of incoherent CL imaging is usually poor, except when confocal light collection techniques are used, 7 in which case the resolution is limited by the diffraction limit.…”

Section: Introductionmentioning

confidence: 99%

Cathodoluminescence microscopy: Optical imaging and spectroscopy with deep-subwavelength resolution

et al. 2015

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This article describes a new microscope, based on angle-resolved cathodoluminescence (CL) imaging spectroscopy, which enables optical imaging and spectroscopy at deepsubwavelength spatial resolution. We used a free electron beam in a scanning electron microscope as a direct excitation source for polarizable materials, and we collected the emitted coherent visible/infrared CL radiation using a specially designed optical collection system that is integrated in the electron microscope. We have demonstrated the use of this new technique for the excitation of plasmons in single metal nanoparticles, surface plasmon polaritons at metal surfaces, resonant Mie modes in dielectric nanostructures, and cavity modes and Bloch modes in photonic crystals. Using angle-resolved detection, we are able to derive the nature of localized modes and the dispersion of propagation modes in dielectric and plasmonic geometries. An outlook about new directions and applications of CL imaging spectroscopy is also provided.

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“…The basic theory and application of cathodoluminescence microscopy has been described in detail in recent publications (Koschek andLorr 1992, Yacobi andHolt 1990). Essentially, cathodoluminescence microscopy may involve two parts, spectroscopy and microscopy.…”

Section: Introductionmentioning

confidence: 98%

Cathodoluminescence imaging—the study of yttrium aluminates distribution in aluminum nitride

Wang

1995

Scanning

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Summary: Cathodoluminescence imaging is a technique which may combine a high-resolution spectroscopic method with a high-spatial resolution electron imaging technique to characterize chemical identity as well as physical size, shape, and spatial distribution of the materials which have cathodoluminescence. Cathodoluminescence imaging has been used to characterize yttrium aluminates in aluminum nitride ceramics. By digitally combining cathodoluminescence and backscattering electron images, it is possible not only to distinguish between different yttrium aluminates, but also to determine the size, shape, and spatial distribution of these phases. This information provides a route to understanding the local residual oxygen concentration before sintering, the amount of sintering aid to be added, and possible sintering schedule. Furthermore, this information may be related to other properties of aluminum nitride such as residual oxygen concentration and thermal conductivity.

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Cathodoluminescence

Cited by 37 publications

References 0 publications

Cathodoluminescence study of the properties of stacking faults in 4H-SiC homoepitaxial layers

Cathodoluminescence study of the properties of stacking faults in 4H-SiC homoepitaxial layers

Cathodoluminescence microscopy: Optical imaging and spectroscopy with deep-subwavelength resolution

Cathodoluminescence imaging—the study of yttrium aluminates distribution in aluminum nitride

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