Cathodoluminescence and photoluminescence of amorphous silicon oxynitride

Gritsenko, V. A.; Shavalgin, Yu.G.; Pundur, P.A.; Wong, Hei; Lau, Woon‐Ming

doi:10.1016/s0026-2714(99)00036-0

Cited by 21 publications

(12 citation statements)

References 18 publications

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“…4, the gate dielectric has been now pushed into its both technological and theoretical limits (0.7 nm) [6,[36][37][38][39][40]. Several undesirable effects emerge [6,[39][40][41][42][43][44][45][46][47]. Further details regarding the requirements, characteristics and limits of ultrathin gate oxides will be discussed in next section.…”

Section: Gate Dielectric Materialsmentioning

confidence: 99%

On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

Wong

Iwai

2006

Microelectronic Engineering

350

184

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Section: Gate Dielectric Materialsmentioning

confidence: 99%

On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors

Wong

Iwai

2006

Microelectronic Engineering

350

184

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“…In SR030:N samples appear like a shoulder due to high CL intensity of blue band, and in the other silicon excess is a well defined band. This band has been assigned to (=SiO ) defects in SiO2 [22], also has been assigner to (=Si2N ) defects in Si3N4 [22]. It is noted that the silicon atoms in the (=SiO) and (=Si2N) defects in SRO:N have a more complicated structure than that in SiO2 and Si3N4 which have slightly different wavelength.…”

Section: Resultsmentioning

confidence: 83%

Cathodoluminescence of Silicon Rich Oxide with nitrogen incorporated

López-Estopíer¹,

Aceves-Mijares²,

Yu³

et al. 2007

2007 4th International Conference on Electrical and Electronics Engineering

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Cathodoluminescence (CL) spectra for Silicon Rich Oxide (SRO) films with different silicon excess and nitrogen content are measured at room temperature. The SRO was deposited by Low Pressure Chemical Vapor Deposition (LPCVD) on Si substrates, and nitrogen was introduced into SRO adding NH3 to the reactive gases. The samples were divided in two parts, one part was annealed at 1100°C. The nitrogen incorporation was observed by Fourier Transform Infrared Spectroscopy (FTIR).All samples annealed at 1100°C show CL, and only SRO with low silicon excess shows emission as deposited. The CL emission shows bands centered at -460nm, -530nm and -720nm. The emission of these bands depends on nitrogen and silicon excess. The peak of the blue CL band (-460nm) is related to twofold coordinated silicon center (=Si:). The band at -530nm is related with defect due to nitrogen incorporation. The band at -720nm band is similar to that obtained in PL.

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“…Luminescent emission at 460 nm (2.7 eV), 520 nm (2.4 eV) and 650 nm (1.9 eV) are mainly related to defects such as Oxygen deficiency-related centers (ODC) or oxygen vacancies (Cervera et al, 2006;Fitting, 2009;Gritsenko et al, 1999), E'δ defect or peroxide radical (Goldberg et al, 1997) and non-bridging oxygen hole centers (NBOHC) (Fitting, 2009;Fitting et al, 2001;Gritsenko et al, 1999), respectively. Since CL measurements have shown luminescent peaks (or distributions) close to those wavelengths, such defects could be inside the SRO films.…”

Section: Cathodoluminescencementioning

confidence: 99%