Cathodic arc sputtering of functional titanium oxide thin films, demonstrating resistive switching

A review of Raman spectroscopy of vanadium oxides

“…The bulk of pure vanadium has similar values. During arc deposition at high temperatures, sputtered ions can interact with the substrate . For an α‐vanadium sample and a Si/SiO 2 substrate, it leads to the formation of the γ‐phase with (11 ) preferred orientation (the second strongest peak at 2θ = 39.6°) and vanadium silicide, V 3 Si (small peaks at 2θ = 38.16, 42.88, and 47.28°).…”

“…Typical deposition time was 10 min. Substrates used for deposition (silicon with a 300 nm thermally produced oxide layer or quartz glass) were cleaned ultrasonically in acetone and vacuum‐annealed at 500°C for 30 min prior to the arc ignition. Once the growth was finished, the heating and oxygen flow were turned off and the sample was left in vacuum for 1 hr for cooling.…”

Suppression of the metal-insulator transition in magnetron sputtered Ti2O3 films

“…These methods usually lead to the formation of the bulk or powder samples. Thin films are mainly produced by the sputtering of titanium targets or chemical vapor deposition, but the reports on the formation and properties of such phases as Ti 2 O, TiO, Ti 2 O 3 , Ti 3 O 5 , or Ti 4 O 7 are very limited [11,12,[19][20][21]. In this work, we demonstrate the formation of thin films of different titanium oxide phases with a focus on the structural and electrical characterization of the produced Ti 2 O 3 samples.…”

“…The material was obtained as an epitaxial thin film on (0001) sapphire substrate using pulsed laser deposition and Ti 2 O 3 target at substrate temperatures above 700 °C [11]. Such films are ferromagnetic n-type semiconductors with a very high electron concentration and they also demonstrate a semiconductor to metal transition at about 370 K. The synthesis of the same material by cathodic arc sputtering was reported in our previous article, but that time the phase was not properly identified and characterized [12].…”

“…The material was obtained as an epitaxial thin film on (0001) sapphire substrate using pulsed laser deposition and Ti 2 O 3 target at substrate temperatures above 700 °C [11]. Such films are ferromagnetic n-type semiconductors with a very high electron concentration and they also demonstrate a semiconductor to metal transition at about 370 K. The synthesis of the same material by cathodic arc sputtering was reported in our previous article, but that time the phase was not properly identified and characterized [12].In most studies, titanium suboxides are produced by different chemical methods, including carbothermic [13], metallothermic [14] or hydrogen [15] reduction of TiO 2 or by oxidizing different titanium-containing precursors, such as TiCl 3 [16], TiH 2 [17], titanium-tetraisopropoxide [18], and others. These methods usually lead to the formation of the bulk or powder samples.…”