Catastrophic degradation of InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy

Ueda, Osamu; Wakao, K.; Komiya, Satoshi; Yamaguchi, Akio; Isozumi, S.; Umebu, Itsuo

doi:10.1063/1.335576

Cited by 40 publications

(12 citation statements)

References 16 publications

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“…There are reports addressing the possibility of multiple thermal runaways during pulsed operation [15,[82][83][84][85]. Up to now, this possibility has been discussed ex post only on the basis of results obtained by transmission electron microscopy (TEM) of devices that were mechanically opened after COD.…”

Section: Cod Threshold In Pulsed Operationmentioning

confidence: 99%

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

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Semiconductor lasers are the most efficient manmade narrow-band light sources and convert up to threequarters of electric energy into light. High-power diode lasers are characterized by very high internal power densities in their small cavity, resulting in local heating and sometimes device degradation. Catastrophic optical damage (COD) of diode lasers is a relevant degradation mechanism and limit for reaching ultrahigh optical powers. An overview is given on research activities targeting the mechanisms being relevant for the COD process in GaAs-based diode lasers emitting in the 630-1100 nm range. The discussion of experiments, where COD is artificially provoked, represents the main topic. The sequence of events and fast kinetics taking place on a nanosecond to microsecond time scale are addressed. A particular emphasis is laid on recent experimental work performed in the authors' laboratories. Paving the way for knowledge-based solutions towards more robust diode lasers represents the ultimate goal of this work. COD diagram determined for a batch of broad-area AlGaAs diode lasers. The time to COD within a single current pulse is plotted versus the actual average optical power in the moment when the COD takes place. Full circles stand for clearly identified COD events (right ordinate), whereas open circles (left ordinate) represent the pulse duration in experiments, where no COD has been detected. A borderline (gray) exists between two regions, i. e., parameter sets, of presence (orange) and absence of COD (blue). This borderline is somewhat blurred because of the randomness in filamentation of the laser nearfield and scatter in properties of the involved individual devices.

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Section: Cod Threshold In Pulsed Operationmentioning

confidence: 99%

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

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“…The total COMD process [1][2][3][4] consists of an initial facet temperature rise, followed by thermal runaway, facet melting, propagation of melt front leading to dark lines, and drop of lasing power and is thought to take place on a timescale of the order of hundreds of nanoseconds, with some evidence for this from previous studies that used 2 s pulses and a thermocamera to observe the COMD on a microsecond timescale. 5 All time studies to date have been carried out at microsecond resolution 6,7 whereas here we apply single, short, high current pulses, observing the COMD process using a fast photodiode to shorten the time resolution to tens of nanoseconds.…”

Section: Introductionmentioning

confidence: 99%

“…The chemical or thermal processes that take place on the facet after thermal runaway has commenced are not well known, making it difficult to obtain good agreement between quantitative modeling and experiment 11 and increasingly sophisticated approaches are being adopted. 12 There are numerous observations of propagating melt fronts [1][2][3][4] inside the device. We looked for a simple explanation that linked the limiting time and the large amount of facet damage observed in these devices.…”

Section: Introductionmentioning

confidence: 99%

Time resolved studies of catastrophic optical mirror damage in red-emitting laser diodes

Elliott

Smowton

Ziegler

et al. 2010

Journal of Applied Physics

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We have observed the changing light intensity during catastrophic optical mirror damage (COMD) on the timescale of tens of nanoseconds using red-emitting AlGaInP quantum well based laser diodes. Using as-cleaved facets and this material system, which is susceptible to COMD, we recorded the drop in light intensity and the area of damage to the facet, as a function of current, for single, high current pulses. We found that in the current range up to 40 A, the total COMD process up to the drop of light intensity to nonlasing levels takes place on a timescale of hundreds of nanoseconds, approaching a limiting value of 200 ns, and that the measured area of facet damage showed a clear increase with drive current. Using a straightforward thermal model, we propose an explanation for the limiting time at high currents and the relationship between the time to COMD and the area of damaged facet material.

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“…In semiconductor lasers, catastrophic failure occurs due to catastrophic optical damage (COD) [14][15][16] at a mirror or in a defect region. In AlGaAs DH LEDs, catastrophic failure occurs due to dislocation glide.…”

Section: Outline Of the Three Degradation Modes Of Semiconductor Optimentioning

confidence: 99%

On Degradation Studies of III–V Compound Semiconductor Optical Devices over Three Decades: Focusing on Gradual Degradation

Ueda

2010

Jpn. J. Appl. Phys.

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This paper describes studies on the reliability of semiconductor optical devices over the course of more than three decades, dating back to the early 1970s. First, a retrospective look is taken at the evolution of optical device development and reliability studies. Second, the three main degradation modes for optical devices (rapid degradation, gradual degradation, and catastrophic failure) are outlined. Third, the results of the classical research into rapid degradation that was carried out in the 1970s and 1980s are presented as an introduction to a systematic discussion of the research that followed-remarkable research into gradual degradation. #

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Catastrophic degradation of InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy

Abstract: Formation of titanium hydrides in (Al,Ga)As doubleheterostructure laser contacts and their effect on degradation rate

Cited by 40 publications

References 16 publications

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Time resolved studies of catastrophic optical mirror damage in red-emitting laser diodes

On Degradation Studies of III–V Compound Semiconductor Optical Devices over Three Decades: Focusing on Gradual Degradation

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