Catalytically solid-phase self-organization of nanoporous SnS with optical depolarizability

Abstract

The catalytic solid-phase synthesis of self-organized nanoporous tin sulfide (SnS) with enhanced absorption, manipulative transmittance and depolarization features is demonstrated. Using an ultralow radio-frequency (RF) sputtering power, the variation of the orientation angle between the anodized aluminum oxide (AAO) membrane and the axis of the sputtered ion beam detunes the catalytically synthesized SnS from nanorod to nanoporous morphology, along the sidewall of the AAO membrane. The ultraslow catalytic sputtering synthesis on the AAO at the RF plasma power of 20 W and the orientation angle of 0° regulates the porosity and integrality of nanoporous SnS, with average pore diameter of 80-150 nm. When transferring from planar to nanoporous structure, the phase composition changes from SnS to SnS2-Sn2S3, and the optical bandgap shrinks from 1.43 to 1.16 eV, due to the preferred crystalline orientation, which also contributes to an ultralow reflectance of <1% at 200-500 nm when both the transmittance and the surface scattering remain at their maxima. The absorption coefficient is enhanced by nearly one order of magnitude with its minimum of >5 × 10(4) cm(-1) at the wavelength between 200 and 700 nm, due to the red-shifting of the absorption spectrum to at least 100 nm. The catalytically self-organized nanoporous SnS causes strong haze and beam divergence of 20°-30° by depolarized nonlinear scattering at the surface, which favors the solar energy conversion with reduced surface reflection and enhanced photon scattering under preserved transmittance.

Non-stoichiometric SnS microspheres with highly enhanced photoreduction efficiency for Cr(vi) ions

“…5b) exhibited two main doublet spin orbit peaks at 486 eV and 494 eV corresponding to Sn 2+ 3d 5/2 and Sn 2+ 3d 3/2 , respectively. 29,30 Furthermore, the Sn 3d peaks were slightly shied to a lower energy, which conrmed Sn 2+ doping (Fig. S1 †).…”

Semiconducting Chalcogenide Alloys Based on the (Ge, Sn, Pb) (S, Se, Te) Formula with Outstanding Properties: A First-Principles Calculation Study

“…Due to their optoelectronic, microelectronic, and high thermoelectric performance, chalcogenide compounds have now become an intense area of scientific research. − Currently, chalcogenides are very interesting for applications in all industrial sectors . So far, SnS, , SnTe, , SnSe, − GeSe, , GeTe, − PbS, − PbTe, − and PbSe , are among the most studied category of IV–VI semiconductor chalcogenides. However, progressive advancements are anticipated once it is possible to obtain materials with any required characteristics which can be adapted to particular applications.…”

“…17−21 Currently, chalcogenides are very interesting for applications in all industrial sectors. 22 So far, SnS, 23,24 SnTe, 25,26 SnSe, 27−29 GeSe, 30,31 GeTe, 32−34 PbS, 35−37 PbTe, 38−40 and PbSe 41,42 are among the most studied category of IV−VI semiconductor chalcogenides. However, progressive advancements are anticipated once it is possible to obtain materials with any required characteristics which can be adapted to particular applications.…”