Catalytic synthesis and photoluminescence of β-Ga2O3 nanowires

Liang, Changhao; Meng, Gang; Wang, G. Z.; Wang, Yunwen; Zhang, L. D.; Zhang, S. Y.

doi:10.1063/1.1374498

Cited by 285 publications

(124 citation statements)

References 13 publications

Supporting

Mentioning

119

Contrasting

Order By: Relevance

“…Thus, in this study, thin films of ZnO and Cd x Zn 1 x O (x = 0.16) were investigated. Gallium oxide (Ga 2 O 3 ) has the biggest band-gap among the transparent conductive oxides, 4.8 eV , making it interesting for photonics working in the UV and visible wavelength region [3,[10][11][12][13]. However, as in the case of ZnO, it is an intrinsic n-type semiconductor and it has been proven very difficult to obtain p-type doping, which is fundamental for technological applications.…”

Section: Case Studiesmentioning

confidence: 99%

Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations

Barbosa

Gonçalves

Redondo-Cubero

et al. 2013

Physica Status Solidi (b)

View full text Add to dashboard Cite

The versatility of perturbed angular correlations (PAC) in the study of nanostructures and thin films is demonstrated, namely for the specific cases of ZnO/CdxZn1−xO thin films and Ga2O3 powder pellets and nanowires, examples of transparent conductive oxides. PAC measurements as a function of annealing temperature were performed after implantation of 111mCd/111Cd (T1/2 = 48 min) and later compared to density functional theory simulations. For ZnO, the substitution of Cd probes at Zn sites was observed, as well as the formation of a probe‐defect complex. The ternary CdxZn1−xO (x = 0.16) showed good macroscopic crystal quality but revealed some clustering of local defects around the probe Cd atoms, which could not be annealed. In the Ga2O3 samples, the substitution of the Cd probes in the octahedral Ga‐site was observed, demonstrating the potential of ion‐implantation for the doping of nanowires.

show abstract

Section: Case Studiesmentioning

confidence: 99%

Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations

Barbosa

Gonçalves

Redondo-Cubero

et al. 2013

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…Photoluminescence of the as-grown β-Ga 2 O 3 and β-Ga 2 O 3 /Ga 2 S 3 NWs obtained at 400, 500, and 600°C is shown in Fig 2a. The as-grown β-Ga 2 O 3 NWs exhibit broad PL with a maximum at ≈ 435 nm, which is attributed to transitions between donor-like states related to oxygen vacancies (V O ) and acceptor-like states due to gallium vacancies (V Ga ) or gallium-oxygen vacancy pairs (V Ga -V O ) [23]. We observe a small red shift of the PL from 2.9 to 2.8 eV after post growth processing under H 2 S at 400°C and a tenfold reduction in intensity.…”

Section: Resultsmentioning

confidence: 99%

Ultrafast Spectroscopy and Red Emission from β-Ga2O3/β-Ga2S3 Nanowires

et al. 2015

View full text Add to dashboard Cite

Ultrafast pump-probe and transient photoluminescence spectroscopy were used to investigate carrier dynamics in β-Ga 2 O 3 nanowires converted to β-Ga 2 O 3 /Ga 2 S 3 under H 2 S between 400 to 600°C. The β-Ga 2 O 3 nanowires exhibited broad blue emission with a lifetime of 2.4 ns which was strongly suppressed after processing at 500-600°C giving rise to red emission centered at 680 nm with a lifetime of 19 μs. Differential absorption spectroscopy reveals that state filling occurs in states located below the conduction band edge before sulfurization, but free carrier absorption is dominant in the β-Ga 2 O 3 /Ga 2 S 3 nanowires processed at 500 to 600°C for probing wavelengths >500 nm related to secondary excitation of the photo-generated carriers from the mid-gap states into the conduction band of Ga 2 S 3 .

show abstract

“…As suggested by the previous studies [9,10], we have used the Au as a catalyst. Without the Au layer, no recognizable nanostructures were formed.…”

Section: Methodsmentioning

confidence: 99%

Study of Ga₂O₃Nanobelts Synthesized by the Thermal Annealing of GaN Powders

Kim

2005

Acta Phys. Pol. A

View full text Add to dashboard Cite

We synthesized the uniform monoclinic gallium oxide (Ga 2 O 3 ) nanobelts by a simple thermal annealing of GaN powders. The as-synthesized nanobelts were rectangular in cross-sectional shape with width ranging from 100 to 700 nm. The length direction of the nanobelt was along [010]. Photoluminescence measurement under excitation at 325 nm showed that the Ga 2 O 3 nanobelts had a blue emission at around 454 nm.

show abstract

Catalytic synthesis and photoluminescence of β-Ga2O3 nanowires

Cited by 285 publications

References 13 publications

Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations

Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations

Ultrafast Spectroscopy and Red Emission from β-Ga2O3/β-Ga2S3 Nanowires

Study of Ga₂O₃Nanobelts Synthesized by the Thermal Annealing of GaN Powders

Contact Info

Product

Resources

About

Catalytic synthesis and photoluminescence of β-Ga2O3 nanowires

Cited by 285 publications

References 13 publications

Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations

Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations

Ultrafast Spectroscopy and Red Emission from β-Ga2O3/β-Ga2S3 Nanowires

Study of Ga2O3Nanobelts Synthesized by the Thermal Annealing of GaN Powders

Contact Info

Product

Resources

About

Study of Ga₂O₃Nanobelts Synthesized by the Thermal Annealing of GaN Powders