Catalyst-free growth of ZnO nanowires by metal-organic chemical vapour deposition (MOCVD) and thermal evaporation

Lee, Woong; Jeong, Min Chang; Myoung, Jae Min

doi:10.1016/j.actamat.2004.05.010

Cited by 196 publications

(89 citation statements)

References 41 publications

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“…Crystalline nanostructures generally grow along fast growth directions, such that when the growth rate of a particular crystal structure are significantly higher along a particular crystal axis, then nanowires will result. The details of VS type growth are still not well understood; however under certain conditions epitaxial growth may also occur [18,19]. Using this method we have successfully grown nanowires of β-Ga 2 O 3 (unpublished), Si [20] and GaN [21].…”

Section: Nanowire Synthesismentioning

confidence: 89%

Applications of electron microscopy to the characterization of semiconductor nanowires

et al. 2006

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We review our current progress on semiconductor nanowires of β-Ga 2 O 3 , Si and GaN. These nanowires were grown using both vapor-solid (VS) and vapor-liquid-solid (VLS) mechanisms. Using transmission electron microscopy (TEM) we studied their morphological, compositional and structural characteristics. Here we survey the general morphologies, growth directions and a variety of defect structures found in our samples. We also outline a method to determine the nanowire growth direction using TEM, and present an overview of device fabrication and assembly methods developed using these nanowires. Comments Postprint version. Published in Applied Physics AbstractWe review our current progress on semiconductor nanowires of β-Ga 2 O 3 , Si and GaN. These nanowires were grown using both vapor-solid (VS) and vapor-liquid-solid (VLS) mechanisms. Using transmission electron microscopy (TEM) we studied their morphological, compositional and structural characteristics. Here we survey the general morphologies, growth directions and a variety of defect structures found in our samples.We also outline a method to determine the nanowire growth direction using TEM, and present an overview of device fabrication and assembly methods developed using these nanowires.3

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Section: Nanowire Synthesismentioning

confidence: 89%

Applications of electron microscopy to the characterization of semiconductor nanowires

et al. 2006

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“…Induction Heating Method [11] 4. Metal-Organic Chemical Vapor Deposition (MOCVD) [12,13] There are several processing parameters such as temperature, pressure, carrier gas (including gas species and its flow rate), substrate and evaporation period, which can be controlled and need to be selected properly before and/or during the thermal vaporization [10]. The source temperature selection mainly depends on the volatility of the source material(s).…”

Section: Growth Of Zno Nanostructuresmentioning

confidence: 99%

ZnO nanostructures for optoelectronic applications

et al. 2008

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“…Recently, synthesis of ZnO nanowires has attracted a great attention since room temperature UV laser emission was detected from ZnO nanowires. 1) In the recent years, various methods, including thermal evaporation, 2) pulsed laser deposition, 3) sputtering, 4) metal organic chemical vapor deposition 5) and solgel process, 6) have been developed to grow ZnO nanowires. Among these methods, thermal evaporation process has been commonly used due to the simplicity and low cost.…”

Section: Introductionmentioning

confidence: 99%

Low Temperature Thermal Evaporation Process for the Synthesis of ZnO Nanowires

Lee

2013

Mater. Trans.

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ZnO nanowires were synthesized by thermal evaporation of ZnBr 2 powder at relatively low temperatures of 600700°C under air atmosphere. Any catalysts and substrates were not used in the synthesis of ZnO nanowires. The ZnO nanowires had a typical diameter of 100 nm and lengths up to several tens micrometers. The X-ray diffraction (XRD) pattern indicated that the ZnO had hexagonal wurtzite structure. The scanning electron microscope (SEM) image showed clearly that catalyst particles existed at the tips of nanowires. The energy dispersive X-ray (EDX) analysis revealed that the catalyst particles were composed of Zn and O. Based on the SEM and EDX results, it was suggested that the nanowires were grown via self-catalytic growth mechanism. A strong green emission was observed in the room temperature cathodoluminescence spectrum.

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Catalyst-free growth of ZnO nanowires by metal-organic chemical vapour deposition (MOCVD) and thermal evaporation

Cited by 196 publications

References 41 publications

Applications of electron microscopy to the characterization of semiconductor nanowires

Applications of electron microscopy to the characterization of semiconductor nanowires

ZnO nanostructures for optoelectronic applications

Low Temperature Thermal Evaporation Process for the Synthesis of ZnO Nanowires

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