Carrier transport mechanisms of reactively direct current magnetron sputtered tungsten oxide/n-type crystalline silicon heterojunction

Dao, Vinh Ai; Trinh, Thanh Thuy; Kim, Sangho; Ngoc, Le Van; Viet, Truong Doan; Giang, Ngo Thi Thanh; Duong, Dinh Loc; Nguyen, Huong Thi Thanh; Nam, Nguyễn Đăng; Yi, Junsin

doi:10.1016/j.jpowsour.2020.228460

Cited by 8 publications

(3 citation statements)

References 27 publications

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“…The main peaks at the binding energies of 36.0 eV and 38.1 eV are attributed to the W 6+ 4f 7/2 and 4 f 5/2 , respectively. The additional shoulder at 34.8 eV can be the W 5+ 4f 7/2 , which is paired with the W 5+ 4f 5/2 at 37.0 eV [20,32,33]. The presence of W 5+ in all four samples indicates the existence of non-stoichiometric WO x and possible oxygen vacancy.…”

Section: Materials Property Of Wox Thin Filmsmentioning

confidence: 85%

“…Yet the evaporated MoO x tends to be unstable under elevated temperature during the subsequent processes of metallization and post annealing [16,17]. Amongst the reported hole-selective contacts, WO x has the largest optical band gap and can remain stable with the processing temperature up to 200 • C [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

“…The stoichiometry value x of WO x is crucial for its optoelectrical property influencing the cell performance [21]. Several deposition techniques have been reported for the preparation of WO x films including magnetron sputtering, vacuum thermal vapor deposition [20,[22][23][24]. It is difficult to tune the composition of WO x using thermal vapor deposition.…”

Section: Introductionmentioning

confidence: 99%

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In-situ deposition of tungsten oxide hole-contact by Hot-Wire CVD and its application in dopant-free heterojunction solar cells

Guo¹,

Li²,

Zhang³

et al. 2022

Semicond. Sci. Technol.

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The tungsten oxide (WOx) thin films have been deposited by a novel hot filament oxidation-sublimation process and applied in the dopant-free heterojunction solar cells as the hole selective contacts. The oxygen flow ratio plays a significant role during the deposition process. With increasing the oxygen flow ratio from 1.7% to 6.7%, the morphology of WOx films changes from small cauliflower-like particles to large cluster accumulation, and the ratio of W6+ increases from 76.1% to 91.4% with the ratio of W5+ decreasing from 23.9% to 8.6%. The work function of WOx can be tailored in a range of 5.5 to 6.1 eV by increasing the oxygen flow ratio. Its optical band gap maintains above 3.2 eV with the conductivity of about 10-5 S/cm. We have applied the WOx films in dopant-free silicon heterojunction solar cells as the hole selective contact layer by replacing the p-type amorphous silicon layer. By taking advantage of the highly transparent WOx layer, a high photon-current density of 39.6 mA/cm2 was achieved with the oxygen flow ratio of 1.7%. It is interesting to find that the optimum cell conversion efficiencies of 14.9% were obtained with the oxygen flow ratio of 1.7% and the thickness of 10-20 nm for the deposition of WOx layer. This work proves the feasibility and good potential of Hot-Wire CVD prepared WOx hole selective contact for efficient dopant-free silicon heterojunction solar cells.

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Section: Materials Property Of Wox Thin Filmsmentioning

confidence: 85%