2010 Proceedings of the European Solid State Device Research Conference 2010
DOI: 10.1109/essderc.2010.5618195
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Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boost

Shao-Ming Koh
1
,
Peng Zhang
2
,
Shufeng Ren
3
et al.
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