Carrier transport and trapping process in photorefractive CdTe:V

Gnatenko, Yurij P.; Piryatinski, Yuri P.; Faryna, I. O.; Bukivskij, P. M.; Gamernyk, R. V.; Paranchych, S. Yu.; Paranchych, L. D.

doi:10.1117/12.475707

Cited by 4 publications

(3 citation statements)

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“…At present, the PL spectra of bulk semiconductor crystals are studied well enough [21][22][23][24], but thin and thick films of these materials have not been thoroughly investigated.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Kosyak

Znamenshchykov

Čerškus

et al. 2016

Journal of Luminescence

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a b s t r a c tPolycrystalline Cd 1 À x Zn x Te thick films with thicknesses of about 30 μm have been deposited on a Mo coated glass substrate by means of close-spaced vacuum sublimation technique. X-ray diffraction measurements have shown that the films obtained have only cubic zinc blende phase. The influence of Zn concentration on the photoluminescence (PL) spectra of Cd 1 À x Zn x Te films was investigated. This let us determine the nature and energy structure of the intrinsic defects and residual impurities in the films. The presence of the most intense acceptor bound exciton A°X-line for x ¼ 0.10 and the lines of localized excitons (x ¼ 0.32 À 0.44) in PL spectra of Cd 1 À x Zn x Te films indicates their fairly good optical quality as well as the p-type conductivity. There were also other intensive broad PL bands, caused by the recombination of donor-acceptor pairs involving complex acceptor centers, extended defects of dislocation type, and microstress in the films. It was also established a correlation between the broadening of exciton lines and the values of microstress in Cd 1 À x Zn x Te thick films. Taking into account the energy position of exciton lines, the concentration dependence of the band gap for the Cd 1 À x Zn x Te thick films is presented.

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“…At present, the PL spectra of bulk semiconductor crystals are studied well enough [21][22][23][24], but thin and thick films of these materials have not been thoroughly investigated.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Kosyak

Znamenshchykov

Čerškus

et al. 2016

Journal of Luminescence

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“…X-ray method was applied for determination of the microstress level ε in CdSe thin films. The PL spectra were measured using an SDL-1 grating spectrometer [12,13,19]. An LGN-404 argon laser was used for excitation by the 488.8 nm line, together with an FEU-62 photomultiplier in the photon-counting mode.…”

Section: Methodsmentioning

confidence: 99%

Photoluminescence of high optical quality CdSe thin films deposited by close-spaced vacuum sublimation

Gnatenko

Bukivskij

Faryna

et al. 2014

Journal of Luminescence

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a b s t r a c tPolycrystalline CdSe thin films (d¼ 0.1-3.0 μm) have been deposited on a glass substrate by means of the close-spaced vacuum sublimation technique. X-ray diffraction measurements have shown that the films obtained at Т s 4473 K have only wurtzite phase. The influence of deposition conditions, in particular, the substrate temperature on the photoluminescence (PL) of CdSe films spectra was investigated. This let us study the effect of glass substrate on their optical quality as well as determine the nature and energy structure of the intrinsic defects and residual impurities in the films. The presence in PL spectrum of the most intense sharp donor bound exciton D 0 X-line for CdSe films obtained at T s ¼873 K indicates the n-type conductivity and their high optical quality. Intensive PL bands in the spectral range 1.65-1.74 eV were also observed, which are associated with the recombination of donor-acceptor pairs with the participation of the shallow donor and acceptor centers caused by Na(Li) residual impurities. As a result of the study of the PL spectra of CdSe films the optimal temperature conditions of their growth were determined, namely, the substrate temperature T s ¼ 873 K and the evaporator temperature T e ¼973 K.

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“…The PL spectra were measured using an SDL-1 grating spectrometer [29,30,36]. An LGN-404 argon laser was used for excitation by the 488.8 nm line.…”

Section: Methodsmentioning

confidence: 99%

Study of the correlation between structural and photoluminescence properties of CdSe thin films deposited by close-spaced vacuum sublimation

Gnatenko

Opanasyuk

Ivashchenko

et al. 2014

Materials Science in Semiconductor Processing

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a b s t r a c tCdSe polycrystalline films were deposited by a close-spaced vacuum sublimation method at different substrate temperatures (T s ) using glass slides as substrates. At T s r 673 K the films have a structure with strong dispersion of grain size (d) (from 0.1 to 0.3 μm). In this case the layer-by-layer mechanism determines the growth process of the layers. For ) is considerably smaller than for the films deposited at Т s ¼773 K (4.0 Â 10 À 3 ). Increase of the value of T s improves the stoichiometry of CdSe films. Analysis of the low-temperature photoluminescence (PL) spectra let us determine the nature and energy of point and extended defects in the investigated films. It was shown that the films contain Na(Li) and P residual impurities. The results of the structural and PL measurements showed that the CdSe polycrystalline films are of fairly good crystal and optical quality for T s ¼ 873 K and can be suitable for various applications.

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Carrier transport and trapping process in photorefractive CdTe:V

Cited by 4 publications

References 0 publications

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Photoluminescence of CdZnTe thick films obtained by close-spaced vacuum sublimation

Photoluminescence of high optical quality CdSe thin films deposited by close-spaced vacuum sublimation

Study of the correlation between structural and photoluminescence properties of CdSe thin films deposited by close-spaced vacuum sublimation

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