Carrier relaxation dynamics in InP quantum dots studied by artificial control of nonradiative losses

Ignatiev, I. V.; Kozin, I. E.; Nair, Selvakumar V.; Ren, Hong-Wen; Sugou, S.; Masumoto, Yasuaki

doi:10.1103/physrevb.61.15633

Cited by 39 publications

(18 citation statements)

References 17 publications

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“…The phonon structures arise as a result of competition between nonradiative tunneling of holes at the photoexcited excited state and the phonon-mediated relaxation from the quasiresonantly excited states in InP quantum dots. [11][12][13] The PL polarization was measured at 1.722 eV indicated in Fig. 1͑a͒.…”

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confidence: 99%

Resonant spin orientation at the exciton level anticrossing in InP quantum dots

2008

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Resonant spin orientation of excitons was observed under linearly polarized quasiresonant excitation around two anticrossing points of excitons in InP quantum dots ͑QDs͒. Under the longitudinal and tilted magnetic fields of 1.5 and 2.5 T, two anticrossings of bright and dark excitons take place. At the anticrossing points, bright and dark excitons mix with each other and the wave function mixing induces the resonant spin orientation. Time-resolved circular polarization clearly showed the resonant spin orientation due to mixing of bright and dark excitons at the anticrossing points. Dark excitons can work as the carrier and spin reservoir because of their long lifetime. We demonstrated that magnetic field can control the spin entanglement and the resonant spin orientation of QDs.

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Resonant spin orientation at the exciton level anticrossing in InP quantum dots

2008

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“…It is comparable with the phonon-mediated energy relaxation time of electron-hole pairs, 37 ps for an excitation-detection energy difference of ⌬E = 50 meV, in InP quantum dots studied by us. [40][41][42] In an electron-doped QD, the circular polarization of PL can change its sign only when the spin of a hole is flipped. The negative A 2 observed for the excitation photon energy of 1.771 eV shows that the spin of a hole is flipped.…”

Section: B the Hanle Curve In Single-electron-doped Quantum Dotsmentioning

confidence: 99%

Spin dephasing of doped electrons in charge-tunable InP quantum dots: Hanle-effect measurements

et al. 2006

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The spin dephasing relaxation in single-electron-doped InP quantum dots was studied by means of Hanle measurements. When an InP quantum dot is doped with one electron on average, a narrow Lorentzian dip with half-width of 4.6 mT appeared and was superposed on two Lorentzians with half-widths of 1.54 and 128 mT in the Hanle curve. The half-widths 1.54 T, 128 mT, and 4.6 mT are ascribed to spin-dephasing relaxation of holes, electron-hole pairs, and doped electrons consistuting negative trions, respectively. The corresponding spin coherence time of the doped electrons at 5 K is 1.7 ns, which is determined by the frozen fluctuation of nuclear spins in the quantum dots. With increase of temperature, the spin-dephasing rate of the doped electrons increases.

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“…The effects of confined acoustical 5 and optical phonons ͑including interface ones͒, [5][6][7][8][9][10][11][12][13][14][15] plasmons, [16][17][18] polaronlike states in QDs, 7,19,20 and the Auger-like process 21,22 have been analyzed.…”

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Quantum dot energy relaxation mediated by plasmon emission in doped covalent semiconductor heterostructures

et al. 2007

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The interaction between interface plasmons within a doped substrate and quantum dot electrons or holes has been theoretically studied in double heterostructures based on covalent semiconductors. The interface plasmon modes, the corresponding dispersion relationship, and the intraband carrier relaxation rate in quantum dots are reported. We find the critical points in the interface plasmon density of states for multilayered structures results in enhanced quantum dot intraband carrier relaxation when compared to that for a single heterostructure. A detailed discussion is made of the relaxation rate and the spectral position dependencies on the quantum dot layer thickness as well as on the dopant concentration. The material system considered was a p-Si/ SiO 2 / air heterostructure with Ge quantum dots embedded in an SiO 2 layer. This structure is typical of those used in technical applications.

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Carrier relaxation dynamics in InP quantum dots studied by artificial control of nonradiative losses

Cited by 39 publications

References 17 publications

Resonant spin orientation at the exciton level anticrossing in InP quantum dots

Resonant spin orientation at the exciton level anticrossing in InP quantum dots

Spin dephasing of doped electrons in charge-tunable InP quantum dots: Hanle-effect measurements

Quantum dot energy relaxation mediated by plasmon emission in doped covalent semiconductor heterostructures

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