Carrier mobility in PbTe(I)

Moldovanova, M.; Assenov, R.; Parthier, L.

doi:10.1002/pssa.2211080227

Cited by 3 publications

(1 citation statement)

References 2 publications

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“…Параметри, які використовувались при розрахунку термоелектричних параметрів для плівок n-PbTe [13,14] На рис. 6 приведені розрахунокові залежності коефіцієнта Зеєбека S від товщини плівок n-PbTe згідно запропонованої моделі для різних значень коефіцієнта дзеркальності α. Для товстих плівок всі криві збігаються, так як має місце макроскопічна асимптотика.…”

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Classical Size Effects in Films of n-PbTe

Ruvinskiǐ

Dzundza

Kostyuk

2015

PCSS

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Based on kinetic Boltzmann equation the boundary problem of calculating the conductivity and Seebeck coefficient for a film with a rectangular cross section is solved. Mirror- diffuse mechanism of reflection of the charge carriers from the surfaces of the film is considered. Calculations were performed for different thicknesses nondegenerate semiconductor n-PbTe. A comparison of theoretical calculations with obtained experimental data for vapor-phase condensates based on PbTe is made.

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Classical Size Effects in Films of n-PbTe

Ruvinskiǐ

Dzundza

Kostyuk

2015

PCSS

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Large Thermopower, Crystalline Cd₃As₂ by Low‐Temperature Vapor Deposition for Room Temperature Heat Waste Recovery

Hosseini

Yavarishad

Alward

et al. 2015

Adv Elect Materials

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carrier back-scattering remains suppressed and the electrical transport is dominated by high-energy carriers that favorably affect the thermopower of Cd 3 As 2 . [ 9 ] Since the power factor is to increase with the carrier mobility, µ , and weighted density-ofstates effective mass, i.e., S 2 σ ≈ µ D *1.5 m , and the lattice thermal conductivity is predicted to be very low, Cd 3 As 2 shows a strong potential for demonstrating high, device-favorable S , and in turn ZT , Table 1 . [ 10 ] Binary cadmium arsenide that solidifi es as Cd 3 As 2 is known to undergo multiple polymorphic solid-solid transitions β α α α → ′′ → ′ → at T of 578, 475, and 225 °C, respectively; the latter of which limits the growth temperature to 225 °C. Given the melting point of this compound of 721 °C, melt-based crystal growth techniques have to be ruled out from consideration. Pulsed-laser evaporation was offered as an alternative route, [ 17 ] but the resultant samples show highly reduced, i.e., polycrystalline and amorphous quality.In this work, a low-T chemical-vapor deposition route is used instead to grow platelets up to cm size in Cd 3 As 2 in a horizontally oriented hot-wall atmospheric pressure chemical vapor deposition (CVD) reactor. To lower the residual pressure of oxygen and water vapors, the reactor was initially fl ushed several times by bringing the base pressure down to ≈1 m Torr and refi lling it with 99% pure argon gas. The temperature of the furnace was gradually ramped up from ≈25 to 700 °C (measured at the middle point of the quartz tube) within an hour. Pure, polycrystalline Cd 3 As 2 chunks were used as a precursor, while quartz and alumina wafers served as growth substrates. To facilitate vapor transport of Cd and As, a steady argon fl ow was maintained within the reactor with the rate of ≈0.2 SCCM. The growth duration was set not to exceed 3 h. Upon completion, the heater was shut down and the reactor was left to cool down naturally at the average rate of ≈5 °C min −1 in the presence of argon fl ow. Except for the tube end points, the temperature gradient (as probed with the help of IR temperature sensor) along the tube main axis, T ∇ was on average a few degrees per cm, Figure 1 , top.After the growth, the substrate as well as the reactor sidewalls was subject to visual and optical microscope inspections, Thermoelectric generators (TEGs) directly convert thermal into electrical energy and are the prime candidates for application in low-grade thermal energy/heat waste recovery. These solidstated devices demonstrate several critical advantages over other power generators as they are silent, very reliable, and compact/lightweight, which make them attractive for several niche deployments including transportation, space satellites, electronics cooling, and thermovoltaic cells. [1][2][3] Yet, TEGs with typical effi ciency of only ≈5%-8% demonstrate poor effi ciencyto-cost ratio, and the problem stems mainly from the poor conversion characteristics of the thermoelectric (TE) materials themselves.The TE performance is rou...

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On a Hypothesis on the Molecule Vacancies in PbTe

Moldovanova

Assenov

1996

Cryst. Res. Technol.

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The temperature dependence of the current carriers mobility in SnTe(I) and PbTe (I) synthesized in presence of SnI2 or PbI2 respectively was studied. An experimental formula was established, showing that current carriers scattering in SnTe(I) is due to vacancies at constant Hall coefficient. For PbTe (I) crystallized from tellurium solution by traveling heater method the mobility is high (between 2.104 and 4.104 cm2/Vs) and the Hall coefficient is constant within the interval 77 K–450 K. Only within 77 K–160 K interval the current carriers scattering is due to vacancies. A hypothesis is proposed based on the presence of molecular vacancies (VpbTe). These vacancies do not change electron gas concentration but do change the carriers mobility. Specimens with a negligibly low lead atoms vacancies Concentration were investigated. An empirical expression is established which shows that their mobility depends on molecular vacancies concentration and explains observed weak temperature influence upon carriers mobility. These results are obtained only from Hall coefficient and electric conductivity measurements within the 77 K–160 K temperature interval.

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Carrier mobility in PbTe(I)

Cited by 3 publications

References 2 publications

Classical Size Effects in Films of n-PbTe

Classical Size Effects in Films of n-PbTe

Large Thermopower, Crystalline Cd₃As₂ by Low‐Temperature Vapor Deposition for Room Temperature Heat Waste Recovery

On a Hypothesis on the Molecule Vacancies in PbTe

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Carrier mobility in PbTe(I)

Cited by 3 publications

References 2 publications

Classical Size Effects in Films of n-PbTe

Classical Size Effects in Films of n-PbTe

Large Thermopower, Crystalline Cd3As2 by Low‐Temperature Vapor Deposition for Room Temperature Heat Waste Recovery

On a Hypothesis on the Molecule Vacancies in PbTe

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Large Thermopower, Crystalline Cd₃As₂ by Low‐Temperature Vapor Deposition for Room Temperature Heat Waste Recovery