Carrier Lifetimes in 4H-SiC Epitaxial Layers on the C-Face Enhanced by Carbon Implantation

Kushibe, Mitsuhiro; Nishio, Johji; Iijima, Ryosuke; Miyasaka, Akira; Asamizu, Hirokuni; Kitai, Hidenori; Kosugi, Ryoji; Harada, Shinsuke; Kojima, Kazutoshi

doi:10.4028/www.scientific.net/msf.924.432

Cited by 8 publications

(4 citation statements)

References 16 publications

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“…The carbon vacancy concentration can be increased by using low-energy electron irradiation, which displaces only C atoms in the 4H-SiC material [17], or ion implantation [15]. On the other hand, thermal oxidation [18] or C ion implantation with subsequent annealing [19][20][21] can be used to introduce carbon interstitials into 4H-SiC, which recombine with carbon vacancies and reduce the carbon vacancy concentration. Acceptor levels of the carbon vacancy exhibit negative-U ordering [22].…”

Section: Introductionmentioning

confidence: 99%

Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation

et al. 2020

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Deep level defects created by implantation of light-helium and medium heavy carbon ions in the single ion regime and neutron irradiation in n-type 4H-SiC are characterized by the DLTS technique. Two deep levels with energies 0.4 eV (EH1) and 0.7 eV (EH3) below the conduction band minimum are created in either ion implanted and neutron irradiated material beside carbon vacancies (Z1/2). In our study, we analyze components of EH1 and EH3 deep levels based on their concentration depth profiles, in addition to (−3/=) and (=/−) transition levels of silicon vacancy. A higher EH3 deep level concentration compared to the EH1 deep level concentration and a slight shift of the EH3 concentration depth profile to larger depths indicate that an additional deep level contributes to the DLTS signal of the EH3 deep level, most probably the defect complex involving interstitials. We report on the introduction of metastable M-center by light/medium heavy ion implantation and neutron irradiation, previously reported in cases of proton and electron irradiation. Contribution of M-center to the EH1 concentration profile is presented.

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Section: Introductionmentioning

confidence: 99%

Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation

et al. 2020

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“…These samples were treated with carbon ion implantation, annealing at 1650 °C, and CMP of the sample surface to extend the carrier lifetime. 1,2,22) We also evaluated a p-type sample (P-100) with an acceptor concentration of 6 × 10 14 cm −3 and a thickness of 100 μm. 18,23) To evaluate the effect of TAAR, two self-standing epilayer samples with a donor concentration of 1 × 10 15 cm −3 were used, and one of the self-standing epilayers was implanted with 1 × 10 15 cm −2 of protons (H + ) with an acceleration energy of 0.95 MeV to induce traps.…”

Section: Experimental Methodsmentioning

confidence: 99%

4H-SiC Auger recombination coefficient under the high injection condition

Tanaka

Nagaya

Kato

2023

Jpn. J. Appl. Phys.

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The on-resistance of bipolar devices depends on the carrier lifetime determined by Shockley-Read-Hall, surface, radiation and Auger recombination processes. Values for the Auger recombination coefficient have been previously reported, but the values were constant in each report. However, the Auger recombination coefficient should have dependence on the excited carrier concentration and presence of the traps. In this study, we observed excited carrier recombination in 4H-SiC under the high injection condition by time resolved free carrier absorption measurements. As a result, we found dependence on the excited carrier concentration of the Auger recombination coefficient and negligible effects of the traps on the coefficient.

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“…[ 9 ] It should be mentioned in this regard that carrier lifetime control in such optically thick epilayers has already gained considerable attention worldwide. [ 10–18 ]…”

Section: Introductionmentioning

confidence: 99%

“…[9] It should be mentioned in this regard that carrier lifetime control in such optically thick epilayers has already gained considerable attention worldwide. [10][11][12][13][14][15][16][17][18] Accordingly, the material of choice for the thermal generation and C-injection experiments should preferably involve ultra-thick and low-doped epilayers to ensure a broader profiling range and depth discrimination.…”

mentioning

confidence: 99%

Cross‐Sectional Carrier Lifetime Profiling and Deep Level Monitoring in Silicon Carbide Films Exhibiting Variable Carbon Vacancy Concentrations

Galeckas

Karsthof

Gana

et al. 2022

Physica Status Solidi (a)

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Silicon carbide (SiC) is a wide bandgap semiconductor with material properties allowing for electronic applications operating under harsh conditions, such as high temperature and radiation.Among the key challenges yet to be resolved is mastering and control of the electrically active point defects, particularly in the technologically most relevant 4H-SiC polytype. The point defects spontaneously generated in a radiation-hard environment usually shorten the carrier lifetime degrading the performance of power electronics and radiation sensors. In contrast, the irradiation by swift ions, e.g., by MeV protons, can be used as a tool for the controlled introduction of radiation-defect-related recombination centers for optimizing lifetime and dynamic characteristics. [1] Still, the longest possible minority carrier lifetime in 4H-SiC epitaxial layers is the key prerequisite for the realization of high-voltage bipolar power devices; e.g., to modulate carrier conductivity in the voltage-blocking layer of a 10 kV class device comprised of 100 μm thick epilayer with doping concentration %10 15 cm À3 , the required carrier lifetime is in the range of 10 μs. In recent years, carrier lifetimes in excess of several microseconds are being demonstrated after the origin of inherently short (sub-microsecond) lifetimes has been associated with intrinsic point defect, carbon vacancy (V C ), acting as a lifetime killer. [2] In response, several remedies to diminish such defects have been developed, such as carbon implantation, high-temperature oxidation, and thermal equilibration in carbon-rich conditions. [3][4][5][6] In 4H-SiC, V C exhibits electrical

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Carrier Lifetimes in 4H-SiC Epitaxial Layers on the C-Face Enhanced by Carbon Implantation

Cited by 8 publications

References 16 publications

Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation

Depth Profile Analysis of Deep Level Defects in 4H-SiC Introduced by Radiation

4H-SiC Auger recombination coefficient under the high injection condition

Cross‐Sectional Carrier Lifetime Profiling and Deep Level Monitoring in Silicon Carbide Films Exhibiting Variable Carbon Vacancy Concentrations

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