Abstract:Silicon carbide (SiC) is a wide bandgap semiconductor with material properties allowing for electronic applications operating under harsh conditions, such as high temperature and radiation.Among the key challenges yet to be resolved is mastering and control of the electrically active point defects, particularly in the technologically most relevant 4H-SiC polytype. The point defects spontaneously generated in a radiation-hard environment usually shorten the carrier lifetime degrading the performance of power el… Show more
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