Carrier-induced optical bistability in the silicon micro-ring resonators under continuous wave pumping

Mitigation of carrier induced optical bistability in silicon ring resonators

“…4). This analysis clearly shows that optically generated carriers in the waveguide increases with optical power and they induce spectral distortion and bistability in case of a ring response [10]. As mentioned in Section 2 these generated carriers can either be drifted across the PN junction using an electric field in reverse-bias mode [26] or can be allowed to recombine with the carriers in the waveguide core in the forward bias regime.…”

“…There have been advances in obtaining high cavity quality factors (Q-factor) as high as 10 6 [7] in a smaller footprint. Though higher optical confinement in Si results in compact device geometries, it leads to nonlinear effects such as two-photon absorption (TPA) [8], carrier induced optical bistability [9,10], thermally induced nonlinearities [11], free carrier absorption (FCA) [12], and free-carrier dispersion (FCD). These optical nonlinearities are reported to occur at optical power as low as 0.277 mW [8].…”

Extraction of the optical properties of waveguides through the characterization of silicon‐on‐insulator integrated circuits

“…[7][8][9][10][11][12] A manifold of SOI photonic devices (memories and logic gates, switchers, and transistors) can be realized due to the large variety of nonlinear effects demonstrating a low threshold intensity (two-photon absorption and Raman scattering). [13][14][15][16] Such features impel the interest in novel SOI applications, such as biosensing and diagnostics, 17,18 spectroscopy, 19 structural monitoring, 20 quantum information and computing, 21 and microwave photonics. 5 As was mentioned above, the large-scale SOI integrated circuits are sensitive to variations of the material properties as well as waveguide geometry.…”

“…Low insertion‐loss levels around 1–3 dB/cm 5,6 in combination with a very compact design result in various passive photonic devices (resonators, filters, multiplexers, interferometers, periodic structures, and photonics crystals) 7–12 . A manifold of SOI photonic devices (memories and logic gates, switchers, and transistors) can be realized due to the large variety of nonlinear effects demonstrating a low threshold intensity (two‐photon absorption and Raman scattering) 13–16 . Such features impel the interest in novel SOI applications, such as biosensing and diagnostics, 17,18 spectroscopy, 19 structural monitoring, 20 quantum information and computing, 21 and microwave photonics 5 …”

Analysis of bistability at the coupling between waveguide and whispering gallery modes of a nonlinear hemicylinder

“…The operation principle of all-optical devices aimed to address the above-mentioned issues (switches, transistors, logic gates, and memory elements) is based on the phenomenon of optical bistability [1], where the intensitydependent nonlinear refractive index n(I) of materials is exploited to allow for switching between two stable states by using light itself also known as the Kerr effect [10]. Metamaterials [11,12], plasmonic nanoantennas [13] and whispering gallery mode (WGM) microresonators [10,[14][15][16] have been considered for enhanced optical bistability as they can increase the incident light by several orders of magnitude thus enabling operations at relatively low input powers. Particularly, waveguide-integrated microring resonators, being one of the main building blocks of integrated photonic chips and characterized by high and ultrahigh quality Q-factors, were investigated for generation of frequency combs and higher harmonics [17,18], electro-optical [19,20], as well as all-optical switching exploiting the optical bistability phenomenon, where a Kerr nonlinear material is used as a resonator host medium [15,21,22].…”