Carrier generation-recombination in the space-charge region of an asymmetrical p-n junction

Choo, S.C.

doi:10.1016/0038-1101(68)90129-9

Cited by 108 publications

(22 citation statements)

References 10 publications

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“…12,13 The ideality factor of the SNS contribution (m) is generally greater than 1. The SNS ideality factor for many materials is typically m $ 2, but for GaInP is often observed to be m $ 1.5-2.…”

mentioning

confidence: 99%

Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells

Geisz

Steiner

García

et al. 2013

Applied Physics Letters

273

201

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We demonstrate 1.81 eV GaInP solar cells approaching the Shockley-Queisser limit with 20.8% solar conversion efficiency, 8% external radiative efficiency, and 80–90% internal radiative efficiency at one-sun AM1.5 global conditions. Optically enhanced voltage through photon recycling that improves light extraction was achieved using a back metal reflector. This optical enhancement was realized at one-sun currents when the non-radiative Sah-Noyce-Shockley junction recombination current was reduced by placing the junction at the back of the cell in a higher band gap AlGaInP layer. Electroluminescence and dark current-voltage measurements show the separate effects of optical management and non-radiative dark current reduction.

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mentioning

confidence: 99%

Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells

Geisz

Steiner

García

et al. 2013

Applied Physics Letters

273

201

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“…Their integration limits implicitly assume a symmetrically doped diode (nn=p where n@), )=concentration of electrons (holes) on the n@)-dope$ side). In order to discuss their results, they then extend the integration limits to 0 and m. In [3] it is shown that the extension of the integration limits in fact is valid only for symmetrical junctions, when additionally the recombination lifetimes for electrons and holes are equal, T~, = 7 . As solar cells are always asymmetrically doped, these speaal results are not applicable here.…”

Section: Approachmentioning

confidence: 97%

Humps in dark I-V-curves-analysis and explanation

Beier

Voß

1993

Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9)

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Analysing a large number of dark and light I-V-curves of different kinds of solar cells [l], we noticed two main discrepancies between the measured curves and the twodiode model which was used for the analysis:-the value of the diode quality factor of the recombination current, n2, more often than not differs from the usually assumed value of n2 = 2 -some I-V-curves show an additional structure ("hump") in the voltage range corresponding to the recombination current which can not be described by varying the value of n2.In this work we give a quantitative analysis and explanation for the observed humps. Starting from their mathematical description, the other forms of deviation from the usual two-diode model are derived.

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“…Band gap and intrinsic carrier concentrations were based on recent standard expressions. (22)(23)(24)(25)(26)(27)(28) Lifetimes were compared to literature as functions of doping and of temperature. (29)(30)(31)(32)(33) In this paper this model was used to predict dark currents and RoA's for proposed SW2 detectors operating at elevated temperatures.…”

Section: Baseline Hgcdte Detector Modelmentioning

confidence: 99%

A HgCdTe detector/FPA/sensor model for evaluation of VLWIR to SWIR sensors with an assessment of SWIR sensors for strategic and tactical missions

et al. 2006

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This model was developed to provide a means for comparative assessments of HgCdTe FPA's and sensors operating in the infrared spectral bands that coincide with the atmospheric windows -(SW1(1.5-1.8µ), SW2(2-2.5µ), MW(3-5µ), and LW(8-12µ). As a true imaging model it also functions as an assessment tool for single-band imagery and for multi-color imagery. The HgCdTe model characterizes both n-on-p and p-on-n homojunctions and heterostructures. Diffusion and depletion dark currents and RoA's are calculated for the three common configurations (mesa heterojunction, planar ionimplanted or diffused junction, and the vertically integrated photodiode). The model places the specified FPA into an optical system, evaluates system performance (NEI, NETD, MRTD, and SNR) and creates two-point corrected imagery complete with 3D noise image effects. This model was exercised here as a predictive tool for performance of state-ofthe-art detector arrays in optical systems in the four spectral bands (atmospheric windows) from the SW to the MW (1.5-1.8, 2.0-2.5, 3.4-4.2 and 4.5-5.0 um) which are the bands commonly considered for hot target and plume exhaust detection. Results from the literature and model runs for various target and scene sets show promise for HgCdTe FPA's and sensors developed for the 2-2.5 um band for a variety of missions such as threat detection from UAV or satellite platforms, perimeter defense, and high-altitude intercepts. INTRODUCTIONAssessments of scenes and targets in the MW (3-5µ) and LW (8-12µ) are common and fairly straightforward as radiances are simple functions of the materials' emittances and temperatures. The SW1 (1.5-1.8µ) and SW2 (2-2.5µ) bands are more complex as reflected light from natural and artificial sources plays a major role in determining the background radiance. The scene contrast generated here is from a combination of SW reflectance values and the level of SW illumination which can come from a variety of sources. In the SW1 band, the NETD is irrelevant and should be replaced by a figure-of-merit that specifies reflectivity differences under scene radiance levels. The SW1 band has been investigated and utilized as a new band for tactical vehicle and personnel imaging, in addition to the shorter wavelength image intensifier band. SW1 background radiance, however, is quite variable and under rural, cloudy nighttime skies, passive SW1 sensors are ineffective as imagers. InGaAs focal plane arrays are the current choice in this band; however, HgCdTe can provide similar performance but at a higher cost. The SW2 atmospheric window at 2-2.5µ and high-quality HgCdTe FPA's at this wavelength provide an opportunity to utilize this band for imaging or missile detection. This study shows that many missile plumes and jet engines emit well in this band, atmospheric transmittances are high, SW2 detectors are unaffected by hot dome or window temperatures, and large-format, high-quality and lower cost HgCdTe on silicon FPA's have been developed whose performance is adequate at operating temperatures from ...

show abstract

Carrier generation-recombination in the space-charge region of an asymmetrical p-n junction

Cited by 108 publications

References 10 publications

Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells

Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells

Humps in dark I-V-curves-analysis and explanation

A HgCdTe detector/FPA/sensor model for evaluation of VLWIR to SWIR sensors with an assessment of SWIR sensors for strategic and tactical missions

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