Abstract:The effects of doping InAs quantum dots (QDs) with Si on charge carrier dynamics and recombination in the InAs/GaAs quantum dot solar cells with AlAs cap layers was investigated. Non-radiative and radiative recombination paths in the doped cells were identified by changes in emission intensity, longwavelength photovoltage (PV) as well as time-resolved PV and photoluminescence (PL) measurements.We find that the reduction of long-wavelength PV and PL with n-doping is due to the electron population of the QD grou… Show more
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