InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels

Golovynskyi, Sergii; Datsenko, Oleksandr I.; Seravalli, L.; Trevisi, Giovanna; Frigeri, P.; Li, Baikui; Lin, Danying; Qu, Junle

doi:10.1016/j.mee.2021.111514

Cited by 9 publications

(5 citation statements)

References 60 publications

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“…InAlAs layers have already been extensively investigated when lattice matched to InP substrates (In 0.52 Al 0.48 As), as it can serve as a barrier to lattice-matched In 0.53 Ga 0.47 As [27], but it can also be used as a metamorphic buffer on GaAs substrates [28] for device applications. However, there are only sporadic studies about InAlAs QDs grown on GaAs [29][30][31][32][33], and just a few more about InAlAs layers used as a barrier or confinement layer for InAs QDs deposited on GaAs [34,35].…”

Section: Introductionmentioning

confidence: 99%

Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots

Gajjela

Alzeidan

Curbelo

et al. 2022

Phys. Rev. Materials

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Section: Introductionmentioning

confidence: 99%

Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots

Gajjela

Alzeidan

Curbelo

et al. 2022

Phys. Rev. Materials

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“…As the embedding material, GaAs is by far the most common choice, but its confinement is rather limited by its bulk band gap of 1.52 eV. Other compatible wider gap options are available, such as In x Al 1−x As with a room temperature energy gap above 2 eV [54], and in the case of (In x Ga 1−x ) 2 O 3 this reaches 5 eV [55]. Therefore, we assume that each studied QD is embedded into a sufficiently wide band gap matrix that provides confinement for the s-shell ground state electron.…”

Section: Introductionmentioning

confidence: 99%

Electron ground state g factor in embedded InGaAs quantum dots: An atomistic study

Kahraman

Bulutay

2021

Phys. Rev. B

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We present atomistic computations within an empirical pseudopotential framework for the electron s-shell ground state g tensor of InGaAs quantum dots (QDs) embedded to host matrices that grant electronic confinement. A large structural set consisting of geometry, size, and molar fraction variations is worked out which also includes a few representative uniform strain cases. The tensor components are observed to display insignificant discrepancies even for the highly anisotropic shapes. The family of g-factor curves associated with these parameter combinations coalesces to a single universal one when plotted as a function of the gap energy, thus confirming a recent assertion reached under much restrictive conditions. Our work extends its validity to alloy QDs with various shapes and finite confinement that allows for penetration to the host matrix, placing it on a more realistic basis. Accordingly, the electrons in InGaAs QDs having s-shell transition energies close to 1.13 eV will be least susceptible to magnetic field. We also show that low indium concentration offers limited g-factor tunability under shape or confinement variations. These findings can be taken into consideration in the fabrication and the use of InGaAs QDs with g-near-zero or other targeted g values for spintronic or electron spin resonance-based direct quantum logic applications.

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“…In the last two decades many articles have been directed to the study of the impact of broadband QW layers on the emission parameters of InAs QDs in a dot-in-well structure. The large number of QW layers were tested, such as: AlAs, 19 InAlAs, 18,20,21 InGaAs, 5,[15][16][17][18]21 AlGaAs, 22 GaAsSb 23,24 and AlGaInAs. 25,26 In addition, the bilayer coating was also investigated, such as: quaternary-ternary or ternary-quaternary materials.…”

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confidence: 99%

“…25,26 In addition, the bilayer coating was also investigated, such as: quaternary-ternary or ternary-quaternary materials. 27 It was shown that by capping the QDs with InGaAs, 15,16,18 InAlAs 18,21 or GaAsSb, 23,24 the strains in the InAs QDs can be partially reduced due to the relaxation of the lattice in the direction of growth along with decreasing QD size fluctuations. Simultaneously, the linewidth of the photoluminescence was reduced to 21 meV at room temperature.…”

mentioning

confidence: 99%

“…Simultaneously, the linewidth of the photoluminescence was reduced to 21 meV at room temperature. 18 It was then revealed that capping layers with Al atoms, such as: AlAs, 19 InAlAs 18,20,21 and AlGaAs 22 significantly decreased the In-Ga intermixing and thus maintained the QD size and QD compositions. The last effect is related to the fact that Al-As bonds have a higher chemical binding energy of 29.3 kcal mol −1 , 28 in comparison with its value for In-As bonds of 13.8 kcal mol −1 28 and Ga-As bonds of 19.5 kcal mol −1 .…”

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confidence: 99%

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Emission Variation of InAs Quantum Dots within (Al)GaInAs Quantum Wells in AlGaAs/GaAs Structures vs Quantum Well Compositions

Torchynska¹,

Tamayo²,

Polupan³

et al. 2022

ECS J. Solid State Sci. Technol.

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The parameters of quantum dots (QDs) of InAs inserted in Al0.30Ga0.70As/GaAs hetero structures with additional cap/buffer AlGaInAs quantum wells (QWs) of different compositions have been investigated by photoluminescence, transmission electron microscopy, and high-resolution X ray diffraction methods. QD structures with the buffer layers: In0.15Ga0.85As (#1) or In0.25Ga0.75As (#2) and covering (cap) layers: Al0.10In0.15Ga0.75As (#1) or Al0.40In0.15Ga0.45As (#2), are compared. Structure #1 is characterized by a higher density of QDs, high QD emission intensity and a smaller full width at half maximum of the PL bands, compared to #2. The dependence of the intensity of QD emission against temperatures of 10-500K has been studied. Significant thermal quenching of the PL intensity was revealed in #1 compared to #2. HR-XRD investigation has confirmed that QD structures are of perfect crystalline quality with sharp QW interfaces and a high number of Pendellösung peaks were detected. To fit the HR-XRD scans, the X′Pert Epitaxy software has been applied. The peculiarities of the QD emission and the parameters of the HR-XRD scans are compared, as well as the advances of the QD structures studied are discussed.

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InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels

Cited by 9 publications

References 60 publications

Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots

Atomic-scale characterization of single and double layers of InAs and InAlAs Stranski-Krastanov quantum dots

Electron ground state g factor in embedded InGaAs quantum dots: An atomistic study

Emission Variation of InAs Quantum Dots within (Al)GaInAs Quantum Wells in AlGaAs/GaAs Structures vs Quantum Well Compositions

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