Carrier depletion type PIN phase shifter in silicon MZM for 200 Gbps operation

Abstract

Silicon-based photonic modulators are a primary choice for on-chip optical devices with CMOS fabrication compatibility. The phase shifter in a silicon photonics modulator plays a significant role in determining the efficiency of the modulator to meet the optical data communication's future demands. Obtaining high extinction ratio (ER) and with acceptable bit error rate (BER) at low voltage and low loss was kept as the primary objective for the proposed PIN phase shifter in an unbalanced silicon Mach-Zehnder modulator. The phase shifter length was kept at 2 mm, and the carrier doping region was reduced to decrease the carrier absorption loss. The concentration of P and N in the phase shifter was set to 7 × 10 17 cm -3 and 5 × 10 17 cm -3 , and the