In this contribution we present results of differential sputter yield measurements of boron nitride, quartz, and kapton due to bombardment by xenon ions. The measurements are made using a sputtering diagnostic based on a quartz crystal microbalance (QCM). The QCM measurement allows full angular resolution, i.e. differential sputtering yield measurements are measured as a function of both polar angle and azimuthal angle. Measured profiles are presented for 100, 250, 350 and 500 eV Xe + bombardment at 0º, 15º, 30º and 45º angles of incidence. We fit the measured profiles with Modified Zhang expressions using two free parameters: the total sputter yield, Y, and characteristic energy E*. Total yields are calculated from the differential profiles and are compared with published values and weight loss values where possible. φ = azimuthal angle in the target plane from the plane containing the ion beam and target normal ρ = density of target material I.