Carbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption Studies

Мурин, Л. И.; Маркевич, В. П.; Lindström, J. L.; Kleverman, Mats; Hermansson, Jörgen; Hallberg, T.; Svensson, B. G.

doi:10.4028/www.scientific.net/ssp.82-84.57

Cited by 32 publications

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“…The effect of carbon on the formation of radiation defects in silicon was studied in [4,7]. A series of car bon-oxygen and carbon-carbon complexes was iden tified.…”

Section: Resultsmentioning

confidence: 99%

“…Evidently, carbon is still involved in reaction (1). Because the centers C(3) and C (4) (IC i O i complex) are unstable at T ≥ 400°C [4,8,9], one can assume the interaction of the moving C i atoms with the VO 2 and VO 3 centers; i.e., the following reactions can occur:…”

Section: Resultsmentioning

confidence: 99%

“…In particular, electron irradiation of oxygen containing Si crystals at temperatures above 300°C leads to the formation of both vacancy-oxygen complexes VO n (n ≥ 2) and nanoclusters which include the interstitial carbon and oxygen atoms [4]. The thermal stability of these RICs increases with rising amount of impurity atoms in the cluster and can reach 500-700°C [4,5]. In addition to high thermal stability, such RICs are usually optically and electrically active and can serve as effective recombination centers of minority carriers in silicon devices.…”

Section: Introductionmentioning

confidence: 99%

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Thermally stable carbon–oxygen complexes in irradiated silicon crystals

Мурин

Гуринович

Medvedeva

et al. 2016

Inorg. Mater. Appl. Res.

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The origin of the main defect impurity complexes induced in silicon crystals with different con tents of oxygen and carbon impurity atoms by electron irradiation in the temperature range 30-600°C has been investigated by means of IR absorption spectroscopy. The efficiencies of the formation of various opti cally active centers as a function of temperature of irradiation are obtained. The radiation enhanced forma tion of a complex consisting of a substitutional carbon and oxygen dimer (T irrad = 450°C) is revealed in car bon containing Si. After irradiation at T irrad = 500°C, vacancy-oxygen trimer-carbon centers, which give rise to vibrational absorption bands at 902, 956, and 1025 cm -1 , are detected for the first time.

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“…The effect of carbon on the formation of radiation defects in silicon was studied in [4,7]. A series of car bon-oxygen and carbon-carbon complexes was iden tified.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Thermally stable carbon–oxygen complexes in irradiated silicon crystals

Мурин

Гуринович

Medvedeva

et al. 2016

Inorg. Mater. Appl. Res.

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“…at room temperature. □, ○, × -the experimental data obtained in [29]; -----the theoretical description made by the authors of this paper. Inst.…”

Section: Simentioning

confidence: 99%

The kinetic of point defect transformation during the annealing process in electron-irradiated silicon

Гайдар¹

2011

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The A-centers (VO) annealing and transformation of precursors to form stable С i О i defects during these processes are described. It was found the necessity to take into account annihilation of vacancy type defects with the interstitial type mobile defects to describe the annealing of defects. It was shown that the energies of migration for vacancy (V) and interstitial carbon atoms С i that are defined by the degree of their localization in silicon lattice at the temperature close to 550 K are equal and

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“…Although the bands are very weak and can be seen only at liquid He temperatures [14], a band at 544 cm -1 can also be detected [15] at room temperature in carbon-rich Si. In essense the latter band appears to be the superposition of two bands [15,16] one related with the C i C s defect and the other with the C i O i defect. Regarding the C i C s defect, a third configuration has been identified [17,18] recently renewing the interest [19] in the study of carbon-related defects.…”

Section: Introductionmentioning

confidence: 96%

Engineering VO, CiOi and CiCs defects in irradiated Si through Ge and Pb doping

Londos

Angeletos

Sgourou

et al. 2015

J Mater Sci: Mater Electron

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Carbon and oxygen associated defects such as VO, C i O i and C i C s are common in electron irradiated silicon. Their presence can affect the material and electronic properties of Si. A way to limit their impact and understand their behavior is through doping with large isovalent dopants. The aim of the present study is to investigate and compare the effect of Ge and Pb doping on VO, C i O i and C i C s defects in electron irradiated Si mainly by using Fourier transform infrared spectroscopy in conjunction with recent density functional theory calculations. It was determined that the production of these defects is reduced by the presence of the isovalent impurity and more significantly for Pb doping as compared to Ge doping. Upon annealing the conversion to secondary defects (in particular VO to VO 2 and C i O i to C s O 2i ) is also affected by the isovalent dopants. Interestingly, the conversion ratio a VO2 /a VO is reduced with the increase of the isovalent radius, whereas the a CsO2i /a CiOi is enhanced. Theoretical calculations were used to corroborate these findings.

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Carbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption Studies

Cited by 32 publications

References 0 publications

Thermally stable carbon–oxygen complexes in irradiated silicon crystals

Thermally stable carbon–oxygen complexes in irradiated silicon crystals

The kinetic of point defect transformation during the annealing process in electron-irradiated silicon

Engineering VO, CiOi and CiCs defects in irradiated Si through Ge and Pb doping

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