Carbon-oxygen complexes as nuclei for the precipitation of oxygen in Czochralski silicon

Oehrlein, G. S.; Lindström, J. L.; Corbett, J. W.

doi:10.1063/1.93060

Cited by 44 publications

(7 citation statements)

References 8 publications

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“…lb. A weak band is also observed at the same position (1012.5 cm-') at LHT; this band was also reported without comment by Oerhlein et al (11). There is a correlation between these bands and the Oi concentration but not with the carbon or boron concentration.…”

Section: Resultssupporting

confidence: 81%

Quantitative Spectroscopy of Interstitial Oxygen in Silicon

Pajot

Stein

Calès

et al. 1985

J. Electrochem. Soc.

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Quantitative data are presented on the infrared (IR) absorption of interstitial oxygen in oxygen-rich silicon using Fourier transform spectroscopy. Besides the well-known 515 and 1106 cm-' room temperature IR bands, due to the symmetric and antisymmetric vibrations of the Si20 entity, respectively, three other bands at 1227, 1720, and 1013 cm-' are reported, whose intensities are scaled with those of the 515 and 1106 cm-' bands. The band at 1227 cm -1 has often been confused with an oxygen precipitate band observed at 1225 cm-' in annealed silicon. Evidence is given that the 1227 cm -~ band is related to interstitial oxygen. It is also shown that another band at 1720 cm -1 is a combination of the antisymmetric mode of Si20 with a phonon combination of the silicon lattice. A weak band at 1013 cm-' is reported for the first time, and it is attributed to an overtone of the 515 cm-' mode.

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Section: Resultssupporting

confidence: 81%

Quantitative Spectroscopy of Interstitial Oxygen in Silicon

Pajot

Stein

Calès

et al. 1985

J. Electrochem. Soc.

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“…Therefore, it indicates that Ge-doping in Cz Si can enhance the formation of oxygen precipitation during crystal growth, i.e., the generation of as-grown oxygen precipitation. It is well accepted that the homogenous nucleation mechanism for oxygen precipitation predominates during high temperature annealing (T4900 1C) [23], that is, the super-saturation of oxygen dominates the precipitation in crystals. So as shown in Fig.…”

Section: Discussionmentioning

confidence: 99%

Germanium effect on as-grown oxygen precipitation in Czochralski silicon

Chen¹,

Yang²,

Li³

et al. 2006

Journal of Crystal Growth

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“…The OPM observations show that denuded zones were formed at the subsurface region in all of these wafers, regardless of the carbon concentrations. It has been shown that carbonoxygen complexes can act as nucleation centers for the precipitation of oxygen (30). However, during the first step, 1050~ annealing, the interstitial oxygen atoms diffuse out of the wafer surface and lower the oxygen concentration in the subsurface region to an undersaturated level, and oxygen precipitation at the subsurface region will not occur, despite the high concentration of carbon atoms existing in this region.…”

Section: Initial Carbon Concentrationmentioning

confidence: 99%

Denuded Zones in Czochralski Silicon Wafers

Wang

Chang

Demer

et al. 1984

J. Electrochem. Soc.

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Denuded zones in the near‐surface regions of Czochralski silicon wafers were investigated by means of both optical microscopy (OPM) and transmission electron microscopy (TEM). The results of this investigation show that the (nearly defect‐free) denuded zones formed near the wafer surface depend strongly on the initial oxygen concentration and the thermal history of the wafers, e. g., wafer annealing‐temperature sequence, gas ambient, and annealing duration. Clear denuded zones were observed in wafers annealed under conditions in which the oxygen out‐diffusion process is enhanced,e. g., in a high‐low, two‐step anneal (1050°C for 16h and 800°C for 16h), in a nonoxidizing ambient. A high initial oxygen concentration false(1.5×1018

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Carbon-oxygen complexes as nuclei for the precipitation of oxygen in Czochralski silicon

Abstract: Enhanced photoluminescence detection of oxygen in silicon crystal by formation of a carbon-oxygen complex through carbon implantation and electron irradiation

Cited by 44 publications

References 8 publications

Quantitative Spectroscopy of Interstitial Oxygen in Silicon

Quantitative Spectroscopy of Interstitial Oxygen in Silicon

Germanium effect on as-grown oxygen precipitation in Czochralski silicon

Denuded Zones in Czochralski Silicon Wafers

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