Quantitative Spectroscopy of Interstitial Oxygen in Silicon

Pajot, B.; Stein, H. J.; Calès, B.; Naud, C.

doi:10.1149/1.2113717

Cited by 73 publications

(49 citation statements)

References 13 publications

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“…This band is located at cα. 1106 cm -1 in Si at room temperature, and is known to exhibit a composite structure at low temperatures [4][5][6]. We also report on the structure related to the lower-frequency infrared-active mode, occurring at about 520 cm -1 in pure Si.…”

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confidence: 75%

Localized Vibrational Modes of Interstitial Oxygen in Si_xGe_1-xAlloys

Lorenc

Humlíček

1998

Acta Phys. Pol. A

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We study infrared-active vibrations of interstitial oxygen in Czochralski-grown samples of Si Gei -x alloys with the silicon content from 0 to 1 between room and liquid nitrogen temperature. The measurements were performed on a large series of samples including single crystals of Si and Si-rich alloys, and polycrystalline samples of alloys with a higher Ge content. We focus on quantitative data on the compositional and temperature evolution of the strongest absorption band above 1100 cm -1 , related to the asymmetric stretching of the Si 2 O pseudomolecule. We have also observed a pronounced Fano-like resonance centered at 520 cm -1 .PACS numbers: 78.30. Am, 63.20.Ρw In Czochralski-grown silicon, germanium, and Si xGe1-x alloy crystals, oxygen exists primarily as an interstitial defect (Oi). The infrared-active vibrations of Οi in Si and Ge have been studied many times. Recently, the structure, dynamics and infrared polarizability have been revised for both Si:O and Ge:O, see Refs. [1][2][3] and references therein.In this paper, we report the basic characteristics of the most prominent Οi absorption bands in the alloys. The results are obtained from a comprehensive set of measurements on 19 samples, covering the whole compositional range from pure Si to pure Ge, performed in the temperature range of 85-300 K. Our main aim is to provide quantitative data on the compositional and temperature evolution of the strongest, localized-vibration band related to the asymmetric stretching of the Si2O pseudomolecule. This band is located at cα. 1106 cm -1 in Si at room temperature, and is known to exhibit a composite structure at low temperatures [4][5][6]. We also report on the structure related to the lower-frequency infrared-active mode, occurring at about 520 cm -1 in pure Si.The measurements have been performed on single-crystal and polycrystalline samples grown by Czochralski (CZ) method. The samples were not intentionally doped; the free-hole concentration at room temperature was typically cα. 10 15 cm-3 . The oxygen concentration was about 10 18 cm-3 throughout the

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confidence: 75%

Localized Vibrational Modes of Interstitial Oxygen in Si_xGe_1-xAlloys

Lorenc

Humlíček

1998

Acta Phys. Pol. A

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“…Standard parameters were used for the interstitial oxygen absorption band (maximum position at 1107 6 1 cm À1 , full width at half-maximum 33 6 1 cm À1 , respectively). 13 A part of the absorption spectra in the low frequency range corresponds to the precipitated silicon oxide phase. It can be described by a number of Gaussian profiles with the parameters for the silicon-oxygen molecular complexes given in Table I.…”

Section: Methodsmentioning

confidence: 99%

Mechanisms of Oxygen Precipitation in Cz-Si Wafers Subjected to Rapid Thermal Anneals

Sarikov

Литовченко

Lisovskyy

et al. 2011

J. Electrochem. Soc.

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The mechanisms of oxygen precipitation in the SiO 2 phase during rapid thermal annealing of solar-grade Cz-Si wafers at moderate temperature (850 C) are analysed. A theoretical model is derived to study the kinetics of oxygen precipitate growth that takes into account a significant increase in the non-equilibrium solubility of oxygen and the increased effective diffusivity of oxygen atoms. A mechanism for the mentioned abnormal modifications of the characteristics of oxygen diffusivity and solubility is suggested based on the dominating influence of excess point defects appearing in the Si wafers during the rapid thermal anneals.

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“…In particular, the interstitial oxygen peak (1106 cm À 1 [25]) was not observed, proving that no significant quantities of oxygen are introduced during the doping process.…”

Section: Oxygen Contentmentioning

confidence: 96%