Carbon, oxygen, boron, hydrogen and nitrogen in the LEC growth of SI GaAs: a thermochemical approach

LEC- and VGF-growth of SI GaAs single crystals—recent developments and current issues

“…The necessity of additional pBN crucibles and boron oxide charges for the ex situ method is contrary to cost reduction, but this disadvantage is more than compensated by lower puller costs due to the smaller pressure range necessary for the growth process and the related lower maintenance costs and, more conclusively, by the possibility to roughly specify the boron, carbon and oxygen content in the required field applying relationships derived from a thermochemical consideration of the reaction system outlined in Section 3.3 [4]. To give an example, oxygen chemical potential in the working gas can be influenced by freezing-out Ga 2 O formed at the interface between the GaAs melt and the boron oxide encapsulant and transported through the boron oxide to the gas phase.…”

Boron and Nitrogen in GaAs and InP Melts Equilibrated with B<SUB>2</SUB>O<SUB>3</SUB> Flux

“…8. The calculated values of boron and nitrogen contents using ChemSage 14) are included in the figure. Although the calculated values are much lower than those obtained in the present work and estimated using the distribution coefficient, the trend that the boron content decreased with increasing nitrogen content agrees with the present result.…”

“…Recent reports have noted that adjustment of ambient gas partial pressures in a crystal growth chamber can independently control the contents of boron and carbon in III-V crystals. [11][12][13][14][15] Increasing the ambient N 2 gas pressure in the crystal growth chamber increases the nitrogen content in a III-V melt according to eq. (1).…”

“…Although Korb et al calculated the contents of boron and nitrogen in a GaAs melt, 14) there are no experimental reports on the relationship between the boron and nitrogen contents of III-V melts.…”

2D simulation of carbon transport at the growth of GaAS crystals by liquid encapsulated Czochralski techniques

“…[3,4] for a qualitative analysis of the effect of oxygen and carbon potentials on the residual impurity concentrations in the melt. However, the assumption of a global thermodynamic equilibrium in the system is only a first approximation, despite high temperatures and rather long reaction times which ensure at least a local equilibrium at the interfaces.…”