2004
DOI: 10.1016/j.cplett.2004.10.119
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Carbon nanotubes grown by laser-annealing of SiC nano-particles

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Cited by 27 publications
(14 citation statements)
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“…Critical factors to consider when forming CNT films are the crystallographic orientation of the free SiC surface, surface quality (defects, impurities), crystal morphology and the decomposition conditions (vacuum, temperature). The spectrum of obtained tubes ranges from MWCNT (multi‐wall carbon nanotubes) for SiC powder148 to double/triple wall CNT for SiC wafers11, 142–146 and defect‐rich SWCNT (single‐wall carbon nanotubes) for SiC nanopowders 149…”
Section: Cdc Synthesis and Structurementioning
confidence: 99%
“…Critical factors to consider when forming CNT films are the crystallographic orientation of the free SiC surface, surface quality (defects, impurities), crystal morphology and the decomposition conditions (vacuum, temperature). The spectrum of obtained tubes ranges from MWCNT (multi‐wall carbon nanotubes) for SiC powder148 to double/triple wall CNT for SiC wafers11, 142–146 and defect‐rich SWCNT (single‐wall carbon nanotubes) for SiC nanopowders 149…”
Section: Cdc Synthesis and Structurementioning
confidence: 99%
“…The need for a process which would allow the integration of CNTs into any stage of the CMOS process flow has stimulated a number of recent investigations into metal-catalyst-free CNT growth methods [9][10][11]. The first of these is based on annealing SiC films or nanoparticles [9,10].…”
Section: Introductionmentioning
confidence: 99%
“…Details of the method can be found elsewhere. 19 The determination of the SWCNT diameter relies on the detection of the Raman signal coming from the radial breathing mode (wavenumber between 140 and 250 cm 1 ) of the tube structure. This mode is unique to SWCNTs and its wavenumber Q , in cm 1 , is related to the nanotube diameter D cnt , in nm, by the relation Q D 223.27/D cnt 8 D cnt being given by D cnt D a n 2 C m 2 C nm 9…”
Section: Composition Of the Sample As Determined By Raman Spectroscopymentioning
confidence: 99%