Carbon Nanotubes for Microelectronics?

Graham, Andrew; Duesberg, Georg S.; Seidel, Robert; Liebau, M.; Unger, E.; Pamler, W.; Kreupl, Franz; Hoenlein, W.

doi:10.1002/smll.200500009

Cited by 96 publications

(60 citation statements)

References 10 publications

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“…Therefore, we measured the electrical resistivity of a freestanding individual nanofiber using methods described in the relevant literature. [28,29] After spin-coating a nanofiber suspension onto Au/Ti electrodes, we confirmed that an individual fibre had bridged the electrode gap (500 nm) using FE-SEM. We then obtained the intrinsic resistivity of an individual nanofiber from a linear current-voltage relation up to 1 V. As shown in Figure 3 b, the electrical resistivity at room temperature of the individual as-grown carbon nanofibers were extremely high (ca.…”

supporting

confidence: 52%

Boron Atoms as Loop Accelerator and Surface Stabilizer in Platelet‐Type Carbon Nanofibers

Fujisawa¹,

Hasegawa²,

Shimamoto³

et al. 2010

ChemPhysChem

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supporting

confidence: 52%

Boron Atoms as Loop Accelerator and Surface Stabilizer in Platelet‐Type Carbon Nanofibers

Fujisawa¹,

Hasegawa²,

Shimamoto³

et al. 2010

ChemPhysChem

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“…Constituting carbon-based nanoscale diodes or transistors has, thus, become one of the main topics in nanotube-based electronics. 28,29 Doping of some kinds of heteroatoms into carbon nanotubes may lead to the modification of electron structure and, as a result, the formation of electron-excess n-type (e.g., nitrogen-doped) or electron-deficient p-type (e.g., boron-doped) semiconducting nanotubes. [30][31][32][33] Provided that one can control at the nanometer level the position and distribution of such heteroatoms as N (nitrogen) and B (boron) in carbon nanotubes, various types of nanostructured junctions with controlled electronic properties would be possibly prepared.…”

Section: Synthesis Of Various Types Of Carbon Nanotubesmentioning

confidence: 99%

Synthesis of Various Types of Nano Carbons Using the Template Technique

Kyotani¹

2006

Bulletin of the Chemical Society of Japan

100

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Using uniform nanochannels of an aluminum anodic oxide film as a template, uniform and unique multiwalled carbon nanotubes can be synthesized with a selectivity of 100%. This technique allows one to precisely control the diameters and the length of nanotubes. Moreover, it is possible to chemically modify only the inner surface of carbon nanotubes and to prepare carbon nanotubes with a double coaxial structure of heteroatom-doped multiwalls. The test tube like carbon prepared by this technique was found to be dispersible in water without any post treatment. In addition to this one-dimensional approach, unique microporous carbon can be prepared by the template technique using zeolite Y. The resulting microporous carbons are characterized by their regular ordering, originating from the regularity of the parent zeolite. When the synthesis conditions were optimized, the specific surface area and the micropore volume of the zeolitetemplated carbon reach more than 4000 m 2 g À1 and 1.8 cm 3 g À1 , respectively. This review introduces such a templatemediated approach and highlights how useful and versatile the template technique is for the production of nano carbons.Carbon is an element with a unique ability to bond with itself principally via sp 3 (diamond-like) and sp 2 (graphite-like) hybridization. This versatility gives rise to a rich diversity of structural forms of solid carbon. Most of the materials dealt with in carbon science and industry are considered to be composed of mainly large polycyclic aromatic molecules. The differences in the shape of such macromolecules and the way the molecules assemble (how they stack and how they are connected to one another) again lead to an immense variety of possibilities. If one could control the shape of the macromolecules and the state of their assemblage at the nanometer level, it would be possible to prepare carbon materials with a unique nano structure, thereby expecting novel and useful characteristics from the structure. Such control is, however, a very difficult task, because the nano structure of carbon materials is not uniform by nature, except for perfect graphite and diamond. To illustrate, a drawing of the molecular structure of activated carbon is shown in Fig. 1, where many curved polycyclic aromatic molecules with different sizes and shapes are stacked and connected in very complicated ways, which is quite different from the uniform ordered porous structure of zeolite materials. It is easily understood from this molecular model that control of the shape and the position of each macromolecule in the model is very difficult and essentially impossible. For the ultimate control of the carbon nano structure, it is desirable to build up a carbon structure from small building blocks, i.e., synthesize the structure from small organic molecules using techniques developed in the field of organic synthesis. However, the organic syntheses of fullerenes and carbon nanotubes have not been achieved yet, even by using cutting-edge technology. One of the most powerful and pro...

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“…[DOI: 10.1143/JJAP.45.L190] KEYWORDS: nanowire, silicon, growth mechanism, VLS Silicon nanowires have attracted significant attention in the last few years owing to their reduced dimensionality, which is of interest in both fundamental and applied studies. On a fundamental side, the nanoscale dimensions lead to inherently quantum mechanical effects such as the Coulomb blockade effect.1,2) On the applied side silicon nanowires hold the promise for the realization of high device density chips 3,4) and complementary metal-oxide-semiconductor (CMOS) technology compatibility. To date silicon nanowires have been synthesized and a wide range of electronic devices [5][6][7][8][9][10][11] with nanoscale dimensions, highly sensitive biochemical sensors, dye sensitized solar cells as well as novel thermo-electric properties have been demonstrated.…”

mentioning

confidence: 99%

Observation of Incubation Times in the Nucleation of Silicon Nanowires Obtained by the Vapor–Liquid–Solid Method

Kalache

Cabarrocas

Morral

2006

jjap

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We report the observation of a characteristic incubation time in the growth of silicon nanowires using the vapor-liquid-solid growth mechanism. This incubation time manifests itself during the growth process as a characteristic time delay in the range of several seconds to minutes, prior to which no nanowires are formed. The observation is in excellent agreement with a theoretical model based on the diffusion of silicon through the catalyst, which predicts the presence of an incubation time, as determined by diffusion of the growth constituent through the solid catalyst. Furthermore the theoretical dependence of the incubation time on the activation energy is derived, and validated experimentally for the first time by measuring the incubation times of silicon nanowires obtained by chemical vapor deposition for both gold and copper as a catalyst. The experimentally observed incubation times are in excellent agreement with the theoretically predicted incubation times. The reported incubation times are a universal feature of vapor-liquid-solid growth and can be applied to any other metal/ semiconductor system for the synthesis of nanowires and provide a novel route to determine the phase space for nanowiresynthesis. [DOI: 10.1143/JJAP.45.L190] KEYWORDS: nanowire, silicon, growth mechanism, VLS Silicon nanowires have attracted significant attention in the last few years owing to their reduced dimensionality, which is of interest in both fundamental and applied studies. On a fundamental side, the nanoscale dimensions lead to inherently quantum mechanical effects such as the Coulomb blockade effect.1,2) On the applied side silicon nanowires hold the promise for the realization of high device density chips 3,4) and complementary metal-oxide-semiconductor (CMOS) technology compatibility. To date silicon nanowires have been synthesized and a wide range of electronic devices [5][6][7][8][9][10][11] with nanoscale dimensions, highly sensitive biochemical sensors, dye sensitized solar cells as well as novel thermo-electric properties have been demonstrated. In light of the growing number of research and application areas, an physical understanding of the growth process of silicon nanowires is becoming increasingly important. The generally accepted theory of silicon nanowire growth is the vapour-liquid-solid (VLS) growth mechanism, based on growth from a liquid metal seed particle. 12-15)Here we analyze the temporal characteristic of the initial phase of the VLS growth mechanism and demonstrate for the first time that the growth of nanowires occurs with a characteristic, strongly temperature dependent time delay on the order of several seconds to minutes. This novel mechanism has not been reported before, and is shown to be an inherent property of the VLS growth mechanism and of particular importance when carrying out growth at low temperatures. Furthermore, it is demonstrated that measurement of the incubation time as a function of temperature yields the activation energy of the diffusion coefficient through the catalyst, a...

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Carbon Nanotubes for Microelectronics?

Cited by 96 publications

References 10 publications

Boron Atoms as Loop Accelerator and Surface Stabilizer in Platelet‐Type Carbon Nanofibers

Boron Atoms as Loop Accelerator and Surface Stabilizer in Platelet‐Type Carbon Nanofibers

Synthesis of Various Types of Nano Carbons Using the Template Technique

Observation of Incubation Times in the Nucleation of Silicon Nanowires Obtained by the Vapor–Liquid–Solid Method

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