Carbon Nanotube Film/Silicon Heterojunction Photodetector for New Cutting-Edge Technological Devices

Abstract

Photodetector (PD) devices based on carbon nanotube/n-silicon heterojunction (NSH) have been realized, with a linear response in a large optical power range, proving competitive performances with respect to a recent nanostructure-based detector and those currently available on the market. The core of these devices is a thin semi-transparent and conductive single-walled carbon nanotubes film with a multitask role: junction element, light absorber and transmitter, photocarrier transporting layer, and charge collector. The PD exhibits rise times of some nanoseconds, detecting light from ultraviolet (240 nm) to infrared (1600 nm), and external quantum efficiency reaching 300% in the VIS spectra region.

A high-performance photodetector based on small-bundled single-wall carbon nanotube film/silicon heterojunctions

“…SWCNT/bulk semiconductor heterostructures can be constructed by simply transferring SWCNTs onto the surface of a bulk semiconductor, which greatly simplies the traditional heterojunction-forming process. In this scenario, the SWCNT/Si heterojunction is of particular interest because of the prevalent use of Si in electronics, 16,[22][23][24][25][26] where Si functions in generating charges when absorbing light and the SWCNT lm plays the dual role of a transparent window and charge transferer. As a result, the performance of SWCNT/Si heterojunctionbased devices depends strongly on the transparent conductive properties of the nanotube lm.…”

“…27 Chemical doping has been used to further decrease the resistance of the SWCNT lm; however, the performance stability is usually poor. 28,29 Recently, interdigital electrodes have been developed to reduce the series resistance of the devices, 16,23,26 which was actually the sum of many smaller sub-cells within a lithographically patterned insulating frame coated with a metallic overlayer. This approach is technologically complex and leads to a cost increase of the achieved SWCNT/Si photodetectors.…”

Silicon‐Based Lithium Ion Battery Systems: State‐of‐the‐Art from Half and Full Cell Viewpoint

“…Thus, the C@Si@C nanotube electrode delivered a high capacity of 2200 mAh g −1 and long lifetime, which was far superior to conventional Si nanotube, Si thin film, C@Si, and Si@C nanotube electrodes. [ 116,236,237 ] This strategy was suitable for the design of other electrode materials. Chen and coworkers designed a self‐supporting C‐Si/Carbon fabric (CF) nanowire electrode through an in situ growth method.…”

Spatially Resolved Photo-Response of a Carbon Nanotube/Si Photodetector

“…One way to realize such devices is by directly growing CNT above a silicon substrate through chemical vapor deposition (CVD) [ 20 , 21 ]. The electrical contact of CNT films with silicon generates a rectifying junction and, due to their high electrical conductivity and optical transparency, the nanotubes work both as an antireflective layer and conductive electrode for photo-charge collection [ 22 , 23 , 24 ].…”