Spatially Resolved Photo-Response of a Carbon Nanotube/Si Photodetector

Capista, Daniele; Lozzi, L.; Pelella, Aniello; Bartolomeo, Antonio Di; Giubileo, Filippo; Passacantando, M.

doi:10.3390/nano13040650

Cited by 7 publications

(3 citation statements)

References 31 publications

(31 reference statements)

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“…To highlight this behavior, we acquired several photocurrent maps of the device using the scanning photocurrent imaging techniques [20,37]. To help the description of the maps, figure 4(a) reports an in-scale schematic of the device shown in figure 1(c).…”

Section: Photocurrent Mappingmentioning

confidence: 99%

SWCNT-Si photodetector with voltage-dependent active surface

Capista,

Lozzi,

Di Bartolomeo

et al. 2023

Nano Ex.

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New works on Carbon Nanotubes-Silicon MIS heterostructures showed that the presence of thickness inhomogeneities in the insulating layer across the device can be exploited to increase their functionalities. In this work, we report the fabrication and characterization of a device consisting of a Single-Walled Carbon Nanotube (SWCNT) film onto an n-type silicon substrate where the nitride interlayer between the nanotubes and the silicon has been intentionally etched to obtain different thicknesses. Three different silicon nitride thicknesses allow the formation of three regions, inside the same device, each with different photocurrents and responsivity behaviors. We show that by selecting specific biases, the photoresponse of the regions can be switched on and off. This peculiar behavior allows the device to be used as a photodetector with a voltage-dependent active surface. Scanning photo response imaging of the device surface, performed at different biases, highlights this behavior.

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Section: Photocurrent Mappingmentioning

confidence: 99%

SWCNT-Si photodetector with voltage-dependent active surface

Capista,

Lozzi,

Di Bartolomeo

et al. 2023

Nano Ex.

Self Cite

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“…Photodetectors play a critical role in the electronic industry, serving as indispensable components for capturing, recognizing, and visualizing optical information. In particular, semiconductor photodetectors are widely utilized in a variety of areas, including video imaging, optical communication, environmental monitoring, biomedical imaging, and other fields. − Metal–insulator–semiconductor (MIS) structures, featuring a thin insulator layer, can suppress carrier diffusion between the metal and semiconductor interfaces and possess a high density of states for effective collection and transportation of minority carriers, thus they are widely used in the fields of photoelectric conversion and sensing. − In solar water splitting, MIS structures can function as Si-based solar water-splitting photoelectrodes, protecting the Si layer from corrosion. , Due to the presence of an insulator layer that separates the metal from the semiconductor and enables operation at high temperatures, MIS structures are applicable in gas sensors in a harsh environment. − Furthermore, MIS structures allow a significant tunneling gate current, which can be effectively harnessed for position-photodetection purposes. − …”

Section: Introductionmentioning

confidence: 99%

Simultaneous Sensing of Velocity and Position of a Moving Light Source Using Metal–Insulator–Semiconductor Structures

Liao,

Li,

Long

et al. 2023

ACS Appl. Mater. Interfaces

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“…Photodetectors are key devices in optoelectronic systems used in our daily life [1][2][3]. Recently, graphene-on-silicon hybrid photodetectors have been developed with responsivity levels that are much larger than their counterparts constructed using only graphene or silicon, which make them promising candidates for high-performance optoelectronic systems [4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Photoresponse of Graphene Channel in Graphene-Oxide–Silicon Photodetectors

et al. 2023

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Graphene-on-silicon photodetectors exhibit broadband detection capabilities with high responsivities, surpassing those of their counterpart semiconductors fabricated purely using graphene or Si. In these studies, graphene channels were considered electrically neutral, and signal amplification was typically attributed to the photogating effect. By contrast, herein, we show graphene channels to exhibit p-type characteristics using a structure wherein a thin oxide layer insulated the graphene from Si. The p-type carrier concentration is higher (six-times) than the photoaging-induced carrier concentration and dominates the photocurrent. Additionally, we demonstrate photocurrent tunability in the channel. By operating this device under a back-gated bias, photocurrent tuning is realized with not only amplification but also attenuation. Gate amplification produces a current equal to the photogating current at a low bias (0.2 V), and it is approximately two orders of magnitude larger at a bias of 2 V, indicating the operation effectiveness. Meanwhile, photocurrent attenuation enables adjustments in the detector output for compatibility with read-out circuits. A quantification model of gate-dependent currents is further established based on the simulation model used for metal–oxide–semiconductor devices. Thus, this study addresses fundamental issues concerning graphene channels and highlights the potential of such devices as gate-tunable photodetectors in high-performance optoelectronics.

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Spatially Resolved Photo-Response of a Carbon Nanotube/Si Photodetector

Cited by 7 publications

References 31 publications

SWCNT-Si photodetector with voltage-dependent active surface

SWCNT-Si photodetector with voltage-dependent active surface

Simultaneous Sensing of Velocity and Position of a Moving Light Source Using Metal–Insulator–Semiconductor Structures

Photoresponse of Graphene Channel in Graphene-Oxide–Silicon Photodetectors

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