Carbon-nanotube-based triode-field-emission displays using gated emitter structure

Ito, Fuminori; Tomihari, Yasuhiro; Okada, Yuji; Konuma, K.; Okamoto, Atsuto

doi:10.1109/55.944328

Cited by 37 publications

(17 citation statements)

References 8 publications

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“…The operating voltages for these configurations range from low to high ͑threshold gate voltages from 20 V to over 70 V at high anode voltages͒. With the exception of the work of Ito and co-workers, 7 the gate currents were either quite high 8,9 ͑over 50%͒ or not reported. A cNT paste technology was also used by Wang and co-workers 10 in filling large gate apertures ͑30 m͒ which had prefabricated sidewall insulator spacers.…”

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confidence: 94%

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Microgating carbon nanotube field emitters by in situ growth inside open aperture arrays

Hsu

2002

Applied Physics Letters

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Multiwalled carbon nanotubes were grown using chemical vapor deposition inside small apertures having a horizontal gate and a sidewall insulator spacer. Emission currents up to 140 nA per cell at 63 V have been obtained. These arrays have exhibited a gate current as low as 2.5% of the anode current throughout the entire gate voltage range, representing the lowest gate to anode current ratio of gated nanotube emitters reported to date. We attribute this feature to the emitter geometry and method of fabrication. The overall fabrication method required only a few and simple processing steps. ͓DOI: 10.1063/1.1472463͔One of the first applications of carbon nanotubes ͑cNTs͒ has been their use as field emitters on account of their natural material, structural, and electronic properties which satisfy many demanding requirements for field emission, including stability, robustness, low voltage, high current-carrying capacity, and mechanical strength. A key factor to their stability as field emitters is the lack of a nonvolatile surface oxide. Surface oxide formation ͑such as on metal or silicon emitters͒ increases the work function, impedes electron transport, and makes the effective work function variable during emission. Furthermore, surface oxides could be the main cause for field emitter array ͑FEA͒ catastrophic destruction by trapping charge which could lead to arcing.1 Carbon nanotubes are also less likely to form nanoprotrusions as metal and silicon cathodes do, thus reducing the probability of current runaway.2 Their small diameters ͑2-50 nm͒ and high aspect ratios enable the high electric field enhancement for lowvoltage operation, despite the relatively high work function (ϳ5.0 eV for graphite͒. They are resistant to blunting by residual back ion bombardment, especially when placed vertical to the substrate, since the nanotube diameter remains the same even when material has been removed from by sputtering.The most commonly studied cNT emitters involved a diode configuration in which the cNTs, grown or placed as dense mats on substrates, were positioned at a known separation from an anode, to which a positive potential was applied to induce field emission from the cNTs. Although very low turn-on voltages ͑as low as 1-2 V per m͒ were measured, the voltages used were still too high for most applications because the cNT-anode separations were usually large distances. In addition, many device applications, such as flat panel displays, require precise control of the array pixels, thus precluding a diode configuration. Hence, gating of the emission by the placement of a third electrode in close and precise proximity to a group of cNT emitters is necessary to lower the operating voltage as well as afford precise local control of emission. Gating is necessary to enable certain applications which include field emitter displays, highfrequency amplifiers, high-voltage switches, portable x-ray sources, multibeam electron-beam lithography, radiation and temperature-insensitive electronics, space craft propulsion, and electro...

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confidence: 94%

“…A common technique involved the use of a cNT paste ͑cNTs mixed in a binding matrix͒ in conjunction with screen print or lithographic technology and the fabrication of ''grid gates,'' 3 ''under-gates,'' 4,5 ''normal gates,'' [6][7][8] and ''drilled gate holes.'' 9 All the gate diameters used in these studies were quite large (Ͼ30 m).…”

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confidence: 99%

Microgating carbon nanotube field emitters by in situ growth inside open aperture arrays

Hsu

2002

Applied Physics Letters

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“…Panels with various cold cathode structures have been tried to form in triode-type FEDs using carbon nanofiber cold cathode emitters [7][8][9][10][11][12]. In the cold cathode structures of these FEDs, the ratio of separation between the gate electrode and the cathode to the hole diameter of the gate electrode is 1:1 to 3:20.…”

Section: Fed Structure and Simulation Methodsmentioning

confidence: 99%

Computer simulation to expand emission area and decrease electron beam width for cold cathode of triode‐type FEDs

Muroi¹,

Ushirozawa²,

Yamamoto³

et al. 2005

Electron Comm Jpn Pt II

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To decrease the electron beam width and expand the emission area of a triode‐type FED using GNF, a cold cathode structure is studied by simulation. In the simulation, not only the electron beam width but also the emission current are evaluated by means of the electric field emission characteristics of a GNF cold cathode emitter. If the surface shape of the cold cathode emitter is assumed hemispherical, the electron emission from the center of the cold cathode emitter is found to increase as the center height of the emitter is increased when the separation between the gate and the cathode is 3 µm and the gate hole diameter is 10 µm. If the anode current obtained from one cold cathode is 0.1 µA for a gate‐to‐cathode separation of 3 µm, the electron beam width increases as the center height of the cold cathode emitter is increased when the gate hole diameter is 10 or 20 µm. On the other hand, the electron beam width is almost constant if the gate hold diameter is 3 or 5 µm. As the gate hole diameter is reduced, the electron beam width is reduced. If the gate hole diameter is 3 µm, the electron beam width can be made less than 100 µm regardless of the height of the center of the cold cathode emitter. Further, when the emission area is studied for a gate hole diameter of 3 µm, the emission area reaches a maximum when the center height of the cold cathode emitter is identical to the cathode electrode. © 2005 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 88(4): 28–36, 2005; Published online in Wiley InterScience (http://www.interscience.wiley.com). DOI 10.1002/ecjb.20119

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“…They have already been used in the fieldemission display devices [5,6], microwave amplifiers [7], and X-ray tubes [8,9]. To obtain the good device performance, different field-emission triode structures have been proposed, such as normal gate triode [9], under gate [10], and surface conductive emission triode [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Improvement of the performance of a field‐emission device with a metal mask

Lei¹,

Wang²,

Zhang³

et al. 2011

Phys. Status Solidi C

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In a field‐emission device, the background noise of the anode current is a little large due to the high anode voltage. Apart from this, the electron beam spreads because of the large gap between the cathode and the anode. To improve the performance of a field‐emission device, a metal mask is introduced between the gate and the anode. Because the metal mask shields the electric field caused by the anode, the background noise of the anode current has been decreased about 90%. With a proper voltage applied on the metal mask, a convergence electric field is generated around the holes of the metal mask, so the focus performance of the electron beam is also improved. The width of the scanning line decreases from 3.1 mm to 0.9 mm after the metal mask is mounted. Because the metal mask can be fabricated in a large volume with low cost, the structure proposed in this paper has a promising application in the field‐emission display devices. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Carbon-nanotube-based triode-field-emission displays using gated emitter structure

Cited by 37 publications

References 8 publications

Microgating carbon nanotube field emitters by in situ growth inside open aperture arrays

Microgating carbon nanotube field emitters by in situ growth inside open aperture arrays

Computer simulation to expand emission area and decrease electron beam width for cold cathode of triode‐type FEDs

Improvement of the performance of a field‐emission device with a metal mask

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