Carbon-induced extreme ultraviolet reflectance loss characterized using visible-light ellipsometry

Chen, Juequan; Louis, Eric; Wormeester, Herbert; Harmsen, Rob; Kruijs, R. W. E. van de; Lee, Chris; Schaik, Willem van; Bijkerk, Frederik

doi:10.1088/0957-0233/22/10/105705

Cited by 11 publications

(10 citation statements)

References 34 publications

(73 reference statements)

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“…The reduction of carbon layers in a hydrogen atmosphere or hydrogen plasma has been extensively studied [64,73,[83][84][85][86][87][88][89]. The applications range from plasma processing [83][84][85], to cleaning in EUV related applications [64,84,87,90,91], and to nuclear fusion, where carbon is a plasma facing material candidate [85,86,88].…”

Section: Carbon Removalmentioning

confidence: 99%

EUV-Induced Plasma: A Peculiar Phenomenon of a Modern Lithographic Technology

et al. 2019

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After a long period of relatively low interest, science related to effects in the Extreme Ultraviolet (EUV) spectrum range experienced an explosive boom of publications in the last decades. A new application of EUV in lithography was the reason for such a growth. Naturally, an intensive development in such area produces a snowball effect of relatively uncharted phenomena. EUV-induced plasma is one of those. While being produced in the volume of a rarefied gas, it has a direct impact onto optical surfaces and construction materials of lithography machines, and thus has not only scientific peculiarity, but it is also of major interest for the technological application. The current article provides an overview of the existing knowledge regarding EUV-induced plasma characteristics. It describes common, as well as distinguishing, features of it in comparison with other plasmas and discusses its interaction with solid materials. This article will also identify the gaps in the existing knowledge and it will propose ways to bridge them.

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Section: Carbon Removalmentioning

confidence: 99%

EUV-Induced Plasma: A Peculiar Phenomenon of a Modern Lithographic Technology

et al. 2019

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“…Finally, a slight increase in carbon thickness was observed, due to the deposition of amorphous hydrocarbons from residual hydrocarbons in the EUV source, or due to sample handling [41,42].…”

Section: Tablementioning

confidence: 99%

Aromatic structure degradation of single layer graphene on an amorphous silicon substrate in the presence of water, hydrogen and Extreme Ultraviolet light

Mund

Sturm

Lee

et al. 2018

Applied Surface Science

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In this paper we study the reaction of water and graphene under Extreme Ultraviolet (EUV) irradiation and in the presence of hydrogen. In this work, single layer graphene (SLG) on amorphous Si as an underlying substrate was dosed with water (0.75 mL) and exposed to EUV (= 13.5 nm, 92 eV) with partial pressures of H 2 in the background. The results show that the aromatic structure of graphene, when exposed to EUV and H 2 , breaks down into aryl ketones and enols of 1,3 di-ketone. Infrared (IR) spectroscopy shows that SLG oxidizes, with increasing H 2 pressure leading to the grain boundary edges of graphene forming ketones and carboxylic acids. In situ and post exposure analyses also reveal that EUV exposure reduces the sp 2 content of the graphene layer, with the sp 3 content increasing, resulting in a more defective graphene layer.

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“…The types of carbon contaminants on EUV multilayers vary with changes in surface exposure intensity, temperature, background gases, exposure time and so on [9]. Main types of carbon contaminants are polymer-like, diamond-like and graphite-like.…”

Section: Types Of Carbon Contaminants On Euv Multilayersmentioning

confidence: 99%