Carbon incorporation in silicon for suppressing interstitial-enhanced boron diffusion

Stolk, P. A.; Eaglesham, D. J.; Gossmann, H.‐J.; Poate, J. M.

doi:10.1063/1.113204

Cited by 203 publications

(69 citation statements)

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“…The boron-doped Si samples used in the present study contain four boron spikes, grown by low temperature MBE [4], with a spacing of 70 nm and the closest B spike being 110 nm from the surface. The peak concentration of the spikes is about 10 19 atoms/cm 3 .…”

Section: Methodsmentioning

confidence: 99%

“…A linear sputter time-depth scale conversion for each profile was established using a linear regression to superpose the measured peak positions on the published peak positions established by profilometry [4]. The diffusivities of B were deduced from the profiles using Wu's σ 2 -analysis [8], which relates the time-dependence of the standard deviation of a profile of any shape (we performed a separate analysis for each doping spike) to the diffusivity, assuming that the diffusivity is independent of concentration.…”

Section: Figure 2 Typical Concentration-depth Profiles For As Grown mentioning

confidence: 99%

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Effect Of Pressure On Boron Diffusion In Silicon

et al. 1996

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We are studying the effect of pressure on boron diffusion in silicon in order to better understand the nature of the point defects responsible for diffusion. Si homoepitaxial layers deltadoped with boron were grown using molecular beam epitaxy. Diffusion anneals were performed in a high temperature diamond anvil cell using fluid argon as a pressure medium. Diffusivities were deduced from B concentration-depth profiles measured with using secondary ion mass spectrometry. Preliminary results indicate that pressure enhances B diffusion in Si at 850 ˚C, characterized by an average activation volume of -0.125±0.02 times the atomic volume, and thus appear consistent with an interstitial-based diffusion mechanism. Results are compared with previous hydrostatic-pressure studies, with results in biaxially strained films, and with atomistic calculations of activation volumes for self diffusion. INTRODUCTIONBecause understanding and controlling diffusion related phenomena become increasingly important as semiconductor device dimensions decrease, diffusion in semiconductors has been heavily studied. Despite this emphasis there remains no consensus about the relative concentrations and mobilities of the point defects involved in the diffusion of many substitutional elements in Si [1]. A study of the dependence of the atomic diffusivity, D, on pressure, p, can provide valuable information to help elucidate the atomistic mechanism(s) of diffusion. The pressure-dependence of the diffusivity is characterized by the activation volume, ∆V*:

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Section: Methodsmentioning

confidence: 99%

Section: Figure 2 Typical Concentration-depth Profiles For As Grown mentioning

confidence: 99%

Effect Of Pressure On Boron Diffusion In Silicon

et al. 1996

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“…Only recently, it regained interest since it has been found [1] that the carbon incorporation can reduce or even suppress the so-called 'Transient Enhanced Diffusion' of dopants like boron or phosphorous. The suppression of this uncontrolled diffusion of dopants during, for example thermal budget, has been described [2] as a relationship between the C oversaturation and the Si point defects created.…”

Section: Introductionmentioning

confidence: 99%

Epitaxy of carbon-rich silicon with MBE

Lavéant

Gerth²,

Werner³

et al. 2002

Materials Science and Engineering: B

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At high concentrations, carbon in silicon shows some properties of technological interests like gap engineering, lattice engineering or the reduction of the so-called 'Transient Enhanced Diffusion' of some dopants. The carbon incorporation in concentrations above 1% is nevertheless a difficult task due to the low carbon solubility in silicon. Here, we present a systematic approach of the Si 1 − x C x layer growth by Molecular Beam Epitaxy (MBE). To study the influence of the growth temperature on the carbon incorporation, we deposit 100 nm thick silicon layers with different carbon concentrations separated by a 100 nm silicon spacer for different temperatures, ranging from 370 up to 800°C. In-situ Reflection High Energy Diffraction (RHEED), Secondary Ion Mass Spectroscopy (SIMS) and cross-sectional Transmission Electron Microscopy (TEM) have been performed to characterize the as-grown structures. We show the presence of two distinct growth phenomena, a 'classical' one, around 450°C, where carbon is mainly substitutionally incorporated, defect free until 2%; and a second one, above 550°C, showing an agglomeration of carbon in thin layers with presumably a very high local concentration, without any planar defects. We propose in this work a diagram of Si:C growth by MBE.

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“…For example, a major factor in the quality of semiconductor silicon substrates is the size and spatial distribution of nanoscopic voids and oxide precipitates, which arise due to the aggregation of vacancies and dissolved oxygen, respectively 1,2 . The presence of extremely low concentrations of impurities such as nitrogen 3,4 or carbon 5,6 can greatly affect these distributions, and depending on how they are introduced, can either greatly improve the material properties or render it useless. Similar phenomena occur in both pure and alloy metallic systems.…”

Section: Introductionmentioning

confidence: 99%

“…A major constraint of this approach was the need to simulate atomistically a sufficiently large number of the aggregating species for a long enough time so as to capture enough of the evolution with reasonable statistical quality. Furthermore, an extremely high initial supersaturation of vacancies (~10 5 ) was required to keep the total size of the system reasonable, whereas typical supersaturations encountered in experimental conditions are no more than 10-100. Similar limitations exist in the simulation of multicomponent aggregation.…”

Section: Introductionmentioning

confidence: 99%

Feature activated molecular dynamics: An efficient approach for atomistic simulation of solid-state aggregation phenomena

Prasad

Sinno

2004

The Journal of Chemical Physics

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A new approach is presented for performing efficient molecular dynamics simulations of solute aggregation in crystalline solids. The method dynamically divides the total simulation space into "active" regions centered about each minority species, in which regular molecular dynamics is performed. The number, size and shape of these regions is updated periodically based on the distribution of solute atoms within the overall simulation cell. The remainder of the system is essentially static except for periodic rescaling of the entire simulation cell in order to balance the pressure between the isolated molecular dynamics regions. The method is shown to be accurate and robust for the Environment-Dependant Interatomic Potential (EDIP) for silicon and an Embedded Atom Method (EAM) potential for copper. Several tests are performed beginning with the diffusion of a single vacancy all the way to large-scale simulations of vacancy clustering. In both material systems, the predicted evolutions agree closely with the results of standard molecular dynamics simulations.Computationally, the method is demonstrated to scale almost linearly with the concentration of solute atoms, but is essentially independent of the total system size. This scaling behavior allows for the full dynamical simulation of aggregation under conditions that are more experimentally realizable than would be possible with standard molecular dynamics. ABSTRACTA new approach is presented for performing efficient molecular dynamics simulations of solute aggregation in crystalline solids. The method dynamically divides the total simulation space into "active" regions centered about each minority species, in which regular molecular dynamics is performed. The number, size and shape of these regions is updated periodically based on the distribution of solute atoms within the overall simulation cell. The remainder of the system is essentially static except for periodic rescaling of the entire simulation cell in order to balance the pressure between the isolated molecular dynamics regions. The method is shown to be accurate and robust for the Environment-Dependant Interatomic Potential (EDIP) for silicon and an Embedded Atom Method (EAM) potential for copper. Several tests are performed beginning with the diffusion of a single vacancy all the way to large-scale simulations of vacancy clustering. In both material systems, the predicted evolutions agree closely with the results of standard molecular dynamics simulations. Computationally, the method is demonstrated to scale almost linearly with the concentration of solute atoms, but is essentially independent of the total system size. This scaling behavior allows for the full dynamical simulation of aggregation under conditions that are more experimentally realizable than would be possible with standard molecular dynamics.

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Carbon incorporation in silicon for suppressing interstitial-enhanced boron diffusion

Cited by 203 publications

References 0 publications

Effect Of Pressure On Boron Diffusion In Silicon

Effect Of Pressure On Boron Diffusion In Silicon

Epitaxy of carbon-rich silicon with MBE

Feature activated molecular dynamics: An efficient approach for atomistic simulation of solid-state aggregation phenomena

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