The efficiency of earth‐abundant Cu2ZnSn(S,Se)4 (CZTSSe) solar cells is considerably lower than the Shockley–Queisser limit. One of the main reasons for this is the presence of deleterious cation disordering caused by SnZn antisite and 2CuZn+SnZn defect clusters, resulting in a short minority carrier lifetime and significant band tailing, leading to a large open‐circuit voltage deficit, and hence, low efficiency. In this study, Ga‐doping is used to increase the CZTSSe solar cell efficiency to as high as 12.3%, one of the highest for this type of cells. First‐principles calculations show that the preference of Ga3+ occupying Zn and Sn sites has a benign effect on suppressing the formation of the SnZn deep donor defects by upwardly shifting the Fermi level, which is further confirmed by deep‐level transient spectroscopy characterization. Besides, the Ga dopants can also form defect‐dopant clusters, such as GaZn+CuZn and GaZn+GaSn, which also have positive effects on suppressing the band‐tailing states. The defect engineering via Ga3+‐doping may suppress the band‐tailing defect with a decreased Urbach energy, elevate the minority carrier lifetime, and in the end, enhance the VOC from 473 to 515 mV. These results provide a new route to further increase CZTSSe‐based solar cell efficiency by defect engineering.

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CO2 flooding is used extensively as a commercial process for enhanced oil recovery. In this study, the visualization of CO2 flooding in immiscible and miscible displacements in a high-pressure condition was studied using a 400 MHz MRI system. For CO2 immiscible displacement, the phenomenon of CO2 channelling or fingering was obviously due to the difference in fluid viscosities and densities. Thus, the sweep efficiency was small, and the final residual oil saturation was 37.2%. For CO2 miscible displacement, the results showed that pistonlike displacement occurred, and the phenomenon of the miscible regions and CO2 front was obvious. The viscous fingering and gravity override caused by the low viscosity and density of the gas were restrained effectively, and the velocity of the CO2 front was uniform. The sweep efficiency was high, and the final residual oil saturation was 13.5%, indicating that CO2 miscible displacement could recover more oil compared with CO2 immiscible displacement. Finally, the average velocity of the CO2 front was evaluated by analyzing the oil saturation profile. A special core analysis method was applied to in situ oil saturation data to directly evaluate the effect of viscosity, buoyancy, and capillary pressure on CO2 miscible displacement.

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The crystal structure of the low-symmetry phase Sm{V) was studied by synchrotron x-ray di8'raction under isothermal compression at room temperature up to 77 GPa {volume fraction=0. 45). Measured lattice spacings and difFraction intensities for Sm{U) in the pressure range beyond the phase mixing show that this phase can be identi5ed as a prototype structure with 3 atoms in the hexagonal unit cell. The occurrence of this low-symmetry structure gives strong evidence for a rapid increase of 4f-electron bonding in Sm in the pressure range above 37 GPa.

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The diffusivity of B in Si is enhanced by pressure, characterized by an activation volume of V*=−0.17±0.01 times the atomic volume; V* is close to the formation volume of the self-interstitial determined by atomistic calculations. The results for hydrostatic pressure are used to make predictions for the effect of biaxial strain on diffusion. Assuming an interstitial-based mechanism and a range of values for the anisotropy in the migration volume, comparison is made between our results, the atomistic calculations, and the measured dependence of B diffusion on biaxial strain. We find a qualitative consistency for an interstitial-based mechanism with the measured strain effect on diffusion in Si–Ge alloys, but not with the measured strain effect in pure Si. Experiments and calculations to determine the origin of this discrepancy are discussed.