Carbon incorporation in metalorganic chemical vapor deposition (Al,Ga)As films grown on (100), (311)<i>A</i>, and (311)<i>B</i> oriented GaAs substrates

Tamamura, Koshi; Ogawa, Junko; Akimoto, Katsuhiro; Mori, Yojiro; Kojima, Chiaki

doi:10.1063/1.97945

Cited by 43 publications

(9 citation statements)

References 7 publications

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“…3 Also the incorporation of unwanted impurities, like C, depends on the surface orientation. 4 Moreover, the use of p-type Si doping of ͑311͒A GaAs/Al x Ga 1Ϫx As modulation doped heterostructures has produced world-record two-dimensional hole gas ͑2DHG͒ mobilities. 5,6 In Ref.…”

mentioning

confidence: 99%

Be doping of (311)A and (100) Al0.24Ga0.76As grown by molecular beam epitaxy

Galbiati

Pavesi

Grilli

et al. 1996

Applied Physics Letters

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mentioning

confidence: 99%

Be doping of (311)A and (100) Al0.24Ga0.76As grown by molecular beam epitaxy

Galbiati

Pavesi

Grilli

et al. 1996

Applied Physics Letters

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“…8. Increasing the arsenic precursor partial pressure decreases the carbon incorporation, as had previously been established for A1GaAs grown using AsH3 [38]. However, the concentrations are significantly reduced when using TBAs.…”

Section: Intrinsic Carbon Dopingmentioning

confidence: 67%

Carbon-impurity incorporation during the growth of epitaxial group III?V materials

Abernathy

Hobson

1996

J Mater Sci: Mater Electron

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This paper is a review of the incorporation and behaviour of carbon in group III-V materials. Both vapour phase epitaxy and growth in ultra high-vacuum environments are covered. Particular attention is given to the factors which influence the carbon-uptake rate such as the growth temperature, ratio of group V to group III materials and parasitic interaction with other species at the growth front. Among the latter, the role of hydrogen is crucial not only to the understanding of the incorporation of carbon but also to its behaviour in the lattice. Consequently, this issue is thoroughly discussed for both growth methods. Potential sources for the introduction of carbon to the growth front are also compared in the light of their utility for obtaining high well-confined acceptor Profiles, such as are required in the latest-generation electronic and photonic devices. Finally, the material quality and dopant stability which can be obtained with carbon-doped materials will be briefly reviewed and, where possible, contrasted with that which can be obtained with other p-type dopants.

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“…The unintentional carbon background doping of bulk GaAs and (Al,Ga)As layers on (311)B GaAs substrates is significantly decreased compared to films on (100) substrate [26]. Similarly, the free carrier concentrations of two InGaAsN films (2 Â 10 17 cm À 3 and 1 Â 10 17 cm À 3 ) on (311)B GaAs substrate are about twice lower than those of films on (100) GaAs substrate (5.2 Â 10 17 cm À 3 and 1.4 Â 10 17 cm À 3 ), even though the N content increased ( Table 1).…”

Section: N Incorporation In Gaasn Ingaasn and Gaassbn Filmsmentioning

confidence: 95%