Carbon impurities and the yellow luminescence in GaN

Lyons, John L.; Janotti, Anderson; Walle, Chris G. Van de

doi:10.1063/1.3492841

Cited by 576 publications

(396 citation statements)

References 36 publications

(52 reference statements)

Supporting

Mentioning

359

Contrasting

Unclassified

Order By: Relevance

“…Carbon is known to cause yellow luminescence while acting as a compensating acceptor impurity. [71,72] Additional, minor impurities found in basic ammonothermal GaN crystals include Mg and Al (≈low-10 17 cm −3 to high-10 16 cm −3 ). Mg is currently thought to be unintentionally introduced via the alkali metal mineralizers.…”

Section: Progress Reportmentioning

confidence: 99%

Defects in Single Crystalline Ammonothermal Gallium Nitride

Suihkonen

Pimputkar

Sintonen

et al. 2017

Adv Elect Materials

View full text Add to dashboard Cite

Native bulk gallium nitride (GaN) has emerged as an alternative for sapphire and silicon as a substrate material for III‐N devices. While quasi‐bulk GaN substrates are currently commercially available, single crystal GaN substrates are considered essential for future high performance light emitters and power devices. The ammonothermal method is currently considered one of the most feasible methods to grow large truly bulk crystals of GaN at low cost and high structural quality. High crystalline quality GaN substrates sliced from ammonothermally grown crystals have been demonstrated and utilized in homoepitaxy for III‐N devices. However, despite the high crystalline quality the properties of as‐grown ammonothermal GaN crystals and substrates are affected by the presence of impurities and other defects that hinder their use for device applications. Here, the main developments of ammonothermal growth of GaN and the effects of impurities, native point defects, and dislocations on the material properties are summarized. Additionally, measurement techniques that enable the evaluation of point defect concentration and low dislocation density distribution over a large area on bulk GaN substrates are reviewed.

show abstract

Section: Progress Reportmentioning

confidence: 99%

Defects in Single Crystalline Ammonothermal Gallium Nitride

Suihkonen

Pimputkar

Sintonen

et al. 2017

Adv Elect Materials

View full text Add to dashboard Cite

show abstract

“…In addition, concentrations of C impurities/complexes are estimated for each form of C impurities. Acceptor form of C (C 1− N ) is known to be dominant in GaN [21][22][23][24] . However, secondary ion mass spectroscopy (SIMS) experiment reported in Ref.…”

Section: Introductionmentioning

confidence: 99%

A first-principles study of carbon-related energy levels in GaN. II. Complexes formed by carbon and hydrogen, silicon or oxygen

Matsubara

Bellotti

2017

Journal of Applied Physics

View full text Add to dashboard Cite

This work presents an in-depth investigation of the properties of complexes composed of hydrogen, silicon or oxygen with carbon, which are major unintentional impurities in undoped GaN. This manuscript is a complement to our previous work on carbon-carbon and carbon-vacancy complexes. We have employed a first-principles method using Heyd-Scuseria-Ernzerhof hybrid functionals within the framework of generalized Kohn-Sham density functional theory. Two H-C, four Si-C and five O-C complexes in different charge states have been considered. After full geometry relaxations, formation energies, binding energies and both thermal and optical transition levels were obtained. The calculated energy levels have been systematically compared with the experimentally observed carbon related trap levels. Furthermore, we computed vibrational frequencies for selected defect complexes and defect concentrations were estimated in the low, mid and high carbon doping scenarios considering two different cases where electrically active defects: (a) only carbon and vacancies and (b) not only carbon and vacancies but also hydrogen, silicon and oxygen. We confirmed that CN is a dominant acceptor in GaN. In addition to it, substantial amount of SiGa − CN complex exists in a neutral form. This complex is a likely candidate for unknown form of carbon observed in undoped n-type GaN.PACS numbers: 61.72. 61.72.uj, 71.15.Mb, 71.55.Eq

show abstract

“…The transistor structure consists of the buffer layer on a silicon substrate ( 111 orientation), a highly resistive carbon doped GaN layer with a thickness of 2.5µm, undoped GaN layer with a thickness of 500 nm and Al 0.25 Ga 0.75 N barrier layer having a thickness of 20nm . To ensure high resistivity of GaN:C layer a deep acceptor trap level located at 0.9eV [7] above the valence band and traps density 1 × 10 18 cm −3 was introduced. A shallow donor traps concentration 1×10 15 cm −3 [8] was assumed for all nitrides layers.…”

mentioning

confidence: 99%

Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs

Taube¹,

Sochacki²,

Szmidt³

et al. 2014

International Journal of Electronics and Telecommunications

View full text Add to dashboard Cite

Abstract-The article presents the results of modelling and simulation of normally-off AlGaN/GaN MOS-HEMT transistors. The effect of the resistivity of the GaN:C layer, the channel mobility and the use of high-κ dielectrics on the electrical characteristics of the transistor has been examined. It has been shown that a low leakage current of less than 10 −6 A/mm can be achieved for the acceptor dopant concentration at the level of 5 × 10 15 cm −3 . The limitation of the maximum on-state current due to the low carrier channel mobility has been shown. It has also been demonstrated that the use of HfO2, instead of SiO2, as a gate dielectric increases on-state current above 0.7A/mm and reduces the negative influence of the charge accumulated in the dielectric layer.

show abstract

Carbon impurities and the yellow luminescence in GaN

Cited by 576 publications

References 36 publications

Defects in Single Crystalline Ammonothermal Gallium Nitride

Defects in Single Crystalline Ammonothermal Gallium Nitride

A first-principles study of carbon-related energy levels in GaN. II. Complexes formed by carbon and hydrogen, silicon or oxygen

Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs

Contact Info

Product

Resources

About