Carbon doping and etching effects of CBr4 during metalorganic chemical vapor deposition of GaAs and AlAs

Parameter study of intrinsic carbon doping of AlxGa1−xAs by MOCVD

“…However, it was observed that the use of CCl 4 causes a strong reduction of growth rate [4,13], which was attributed to the etching of GaAs by Cl [14][15][16]. Although most groups tend to use CCl 4 , CBr 4 was also found to give high doping levels by some authors [17][18][19]. Most recently, the use of CCl 3 Br was reported by Uchida et al [20] in an attempt to reduce the etching of GaAs.…”

“…A few reports concern the use of CCl 4 as a doping precursor [1,3,14,15], achieving a peak hole concentration of 1.36 Â 10 20 cm À3 for Al 0.3 Ga 0.7 As [2] at 550 1C and a V/III ratio of 16. The use of CBr 4 was reported to result in much lower hole concentrations of approximately 1.3 Â 10 19 cm À3 in Al 0.3 Ga 0.7 As [18].…”

CBr4 as precursor for VPE growth of cubic silicon carbide

“…CBr 4 is commonly used as a dopant during the MOVPE of III-V compounds [8][9][10] and is preferred to CCl 4 because of the lower bond strengths of C-Br relative to C-Cl (56.2 kcal/mol for CBr 4 , 73 kcal/mol for CCl 4 ). Although CBr 4 was used to deposit policrystalline 3C-SiC on Si at low pressure and temperature with the aid of UV irradiation and good quality micromechanical structures were obtained by this method [11,12], its use in SiC growth is not so common and there are very few papers on it.…”

High current gain stability of carbon-doped p-GaAs in InGaP/GaAs heterojunction bipolar transistors

“…Metal-organic chemical vapor deposition (MOCVD) is beneficial method to grow carbon-doped p-GaAs material. However, many studies of carbon-doped p-GaAs layers grown by MOCVD have been carried out [3][4][5][6][7][8][9][10][11][12], most were grown at V/III ratios below 1.0.…”