It has been shown that significant changes in the course of solid state reactions can be realized by decreasing length scale, temperature, or by varying parent microstructures. In the case of the formation of Cu 3 Si by interdiffusion of Cu and Si, previous research has shown that over a large temperature range reaction rates are determined by the rate of grain boundary diffusion of Cu through the growing Cu 3 Si phase. We have examined the effect of replacing crystalline Si with amorphous Si (a-Si) on these solid state reactions, as well as the effect of decreasing the temperatures and length scales of the reactions. Multilayered thin film diffusion couples of Cu and a-Si were prepared by sputter deposition, with most average composite stoichiometries close to that of the equilibrium phase Cu 3 Si. Layer thicknesses of the two materials were changed such that the modulation (sum of the thickness of one layer of Cu and a-Si), λ, varied between 5 and 160 nm. Xray diffraction analysis and transmission electron microscopy analysis were used to identify phases present in as prepared and reacted diffusion couples. Complete reactions to form a single phase or mixtures of the three low temperature equilibrium silicides (Cu 3 Si, Cu 15 Si 4 and Cu 5 Si) were observed. Upon initial heating of samples from room temperature, heat flow signals were observed with differential scanning calorimetry corresponding to the growth of Cu 3 Si. At higher temperatures (> 525 K) and in the presence of excess Cu, the more Cu rich silicides, Cu 15 Si 4 and Cu 5 Si formed. Based on differential scanning calorimetry results for samples with average stoichiometry of the phases Cu 3 Si and Cu 5 Si, enthalpies of formation of these compounds were measured. Considering the reaction of these phases forming from Cu and a-Si, the enthalpies were found to be-13.6±0.3 kJ/mol for Cu 3 Si and-10.5±0.6 kJ/mol for Cu 5 Si. The growth of Cu 3 Si was found to obey a parabolic growth law: