Carbide-free one-zone sulfurization method grows thin MoS2 layers on polycrystalline CVD diamond

Abstract

The last few decades faced on the fabrication of advanced engineering materials involving also different composites. Here, we report on the fabrication of few-layer molybdenum disulfide on top of thin polycrystalline diamond substrates with a high specific surface area. In the method, pre-deposited molybdenum coatings were sulfurized in a one-zone furnace at ambient pressure. As-prepared MoS2 layers were characterized by several techniques including grazing-incidence wide-angle X-ray scattering, atomic force microscopy, scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. We found out that the initial thickness of Mo films determined the final c-axis crystallographic orientation of MoS2 layer as previously observed on other substrates. Even though it is well-known that Mo diffuses into diamond at elevated temperatures, the competing sulfurization applied effectively suppressed the diffusion and a chemical reaction between molybdenum and diamond. In particular, a Mo2C layer does not form at the interface between the Mo film and diamond substrate. The combination of diamond high specific surface area along with a controllable layer orientation might be attractive for applications, such as water splitting or water disinfection.

Tuning the charge carrier mobility in few-layer PtSe2films by Se : Pt ratio

“…The temperature of the substrate and powder is the same during the growth. 23,24 This is in contrast to the standard CVD method, where the reaction takes place in a two-zone furnace with selenium powder and Pt substrate heated at different temperatures. Annealing temperature (550 C), annealing time (30 min) and heating rate (25 C min À1 ) stay unchanged while the nitrogen ow rate ranged from 20 to 350 sccm.…”

Tuning the orientation of few-layer MoS2 films using one-zone sulfurization

“…The apparent moderate orientation degree of the crystallographic c-axis has an origin in large angular spread of the underlying polycrystalline diamond facets. 45 To elucidate whether the VA MoS 2 growth of the is linked only with the rapid sulfurization, we grew MoS 2 layers changing the heating rate and measured the layer alignment. The heating rate values were altered from 25 C min À1 down to 0.5 C min À1 .…”

Novel highly substituted thiophene-based n-type organic semiconductor: structural study, optical anisotropy and molecular control

“…In particular, we used MoS 2 substrates with either horizontal or vertical orientation of the atomic layers with respect to the substrate surface. 47,57 The orientation of MoS 2 layers subsequently influences the orientation of small organic molecules deposited on MoS 2 surface. 37 Figure 5 shows the GIWAXS reciprocal maps of 15 nm thick NCOH film grown on MoS 2 underlayers with two distinct orientations of the atomic layer.…”

“…Mo films were subsequently sulfurized in vapors at 800 °C in the inert atmosphere of N 2 . 47 The thickness of the Mo layer determines the orientation of the MoS 2 atomic layers. 37 The MoS 2 characterization using the GIWAXS method showed a high degree of film crystallinity and no residual Mo grains.…”