Tuning the orientation of few-layer MoS<sub>2</sub> films using one-zone sulfurization

Sojková, M.; Végsö, Karol; Mrkyvkova, Nada; Hagara, Jakub; Hutár, Peter; Rosová, A.; Čaplovičová, Mária; Ludacka, Ursula; Skákalová, Viera; Majková, E.; Šiffalovič, Peter; Hulman, Martin

doi:10.1039/c9ra06770a

Cited by 25 publications

(34 citation statements)

References 46 publications

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“…The temperature of the substrate and powder is the same during the growth. 23,24 This is in contrast to the standard CVD method, where the reaction takes place in a two-zone furnace with selenium powder and Pt substrate heated at different temperatures. Annealing temperature (550 C), annealing time (30 min) and heating rate (25 C min À1 ) stay unchanged while the nitrogen ow rate ranged from 20 to 350 sccm.…”

Section: Experimental Ptse 2 Fabricationmentioning

confidence: 99%

Tuning the charge carrier mobility in few-layer PtSe₂films by Se : Pt ratio

et al. 2021

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Section: Experimental Ptse 2 Fabricationmentioning

confidence: 99%

Tuning the charge carrier mobility in few-layer PtSe₂films by Se : Pt ratio

et al. 2021

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“…The temperature of the substrate and powder is the same during the growth. [19,20] This is in contrast to the standard CVD method, where the reaction takes place in a two-zone furnace with selenium powder and Pt substrate heated at different temperatures.…”

Section: Methodsmentioning

confidence: 99%

“…Pre-deposited platinum on the substrate and the selenium powder are placed next to each other in the center of a furnace. Recently, we used this method in preparing MoS2 thin films on different substrates with the possibility to control the layer alignment [19][20][21][22]. In this paper, we study how the selenization temperature, growth time and the thickness of an initial Pt layer affect the structural and electrical properties of as-prepared PtSe2 films.…”

Section: Introductionmentioning

confidence: 99%

High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization

Sojková

Dobročka

Hutár

et al. 2021

Applied Surface Science

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“…This is due to the favoured sulphur diffusion along the vdW gaps between the vertically oriented MoS 2 layers [45,47,48]. Besides the initial Mo (or Mo-oxide) thickness, other key factors controlling MoS 2 formation include the substrate heating rate, pressure, and local S concentration on the sample surface [49][50][51]. Furthermore, the underlying substrate can play an important role in MoS 2 formation during sulfurization of pre-deposited MoO 3 .…”

Section: Introductionmentioning

confidence: 99%

Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization

et al. 2022

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In this paper, we report a multiscale investigation of the compositional, morphological, structural, electrical, and optical emission properties of 2H-MoS2 obtained by sulfurization at 800 °C of very thin MoO3 films (with thickness ranging from ~2.8 nm to ~4.2 nm) on a SiO2/Si substrate. XPS analyses confirmed that the sulfurization was very effective in the reduction of the oxide to MoS2, with only a small percentage of residual MoO3 present in the final film. High-resolution TEM/STEM analyses revealed the formation of few (i.e., 2–3 layers) of MoS2 nearly aligned with the SiO2 surface in the case of the thinnest (~2.8 nm) MoO3 film, whereas multilayers of MoS2 partially standing up with respect to the substrate were observed for the ~4.2 nm one. Such different configurations indicate the prevalence of different mechanisms (i.e., vapour-solid surface reaction or S diffusion within the film) as a function of the thickness. The uniform thickness distribution of the few-layer and multilayer MoS2 was confirmed by Raman mapping. Furthermore, the correlative plot of the characteristic A1g-E2g Raman modes revealed a compressive strain (ε ≈ −0.78 ± 0.18%) and the coexistence of n- and p-type doped areas in the few-layer MoS2 on SiO2, where the p-type doping is probably due to the presence of residual MoO3. Nanoscale resolution current mapping by C-AFM showed local inhomogeneities in the conductivity of the few-layer MoS2, which are well correlated to the lateral changes in the strain detected by Raman. Finally, characteristic spectroscopic signatures of the defects/disorder in MoS2 films produced by sulfurization were identified by a comparative analysis of Raman and photoluminescence (PL) spectra with CVD grown MoS2 flakes.

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Tuning the orientation of few-layer MoS₂ films using one-zone sulfurization

Abstract: Schematic representation of the GIWAXS measurements on HA and VA MoS2 layers.

Cited by 25 publications

References 46 publications

Tuning the charge carrier mobility in few-layer PtSe₂films by Se : Pt ratio

Tuning the charge carrier mobility in few-layer PtSe₂films by Se : Pt ratio

High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization

Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization

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Tuning the orientation of few-layer MoS2 films using one-zone sulfurization

Abstract: Schematic representation of the GIWAXS measurements on HA and VA MoS2 layers.

Cited by 25 publications

References 46 publications

Tuning the charge carrier mobility in few-layer PtSe2films by Se : Pt ratio

Tuning the charge carrier mobility in few-layer PtSe2films by Se : Pt ratio

High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization

Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization

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Product

Resources

About

Tuning the orientation of few-layer MoS₂ films using one-zone sulfurization

Tuning the charge carrier mobility in few-layer PtSe₂films by Se : Pt ratio

Tuning the charge carrier mobility in few-layer PtSe₂films by Se : Pt ratio