Caractéristiques diélectriques du polyparaphénylène

Duroux, Jean‐Luc; Moliton, André; Froyer, G.; Maurice, F.

doi:10.1016/0014-3057(86)90003-0

Cited by 7 publications

(1 citation statement)

References 3 publications

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“…Finally, the results of this simple interstitial doping, where the dopants “flee” in the organic lattice is an extremely disparaging drop in conductivity. A step around this is the use of ionic implantation,2, 3 but this technology has not really been adapted to the development of low cost electronics (even if, without doubt, initial studies of p‐i‐n OLEDs merits being pushed to the limits). In addition, it is by methods different to conventional doping (interstitial by charge transfer), that the adjustment of the electronic transport properties could be carried out properly: an improvement in the intrinsic transport of materials (for example by increasing charge mobilities); doping‐dedoping of polyanilines by acid‐base equilibration, generation of in‐situ charges by photo‐excitations or by field effects.…”

Section: Generalities: Organic Electronics or Plastic Electronics? Wimentioning

confidence: 99%

The origin and development of (plastic) organic electronics

Moliton¹,

Hiorns²

2012

Polymer International

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Section: Generalities: Organic Electronics or Plastic Electronics? Wimentioning

confidence: 99%

The origin and development of (plastic) organic electronics

Moliton¹,

Hiorns²

2012

Polymer International

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Implanted polymer junctions obtained with electrogenerated polythiophene films

Lucas

Rodríguez²,

Otero³

et al. 1995

Adv Material for Optics Elec

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Using polythiophene films (∼5 μm thick) electrogenerated by trapezoidal waves of potential, then partially reduced, we realised metal‐polythiophene contacts on the one hand. The electrical characteristics of a steel/polythiophene/gold sandwich structure are presented. We consider that the rectifying contact takes place between steel and p‐type polythiophene. On the other hand, we showed that p‐type polythiophene could be compensated after an implantation of alkali ions (Cs+ or Na+) in order to lead to the realisation of PN junctions. We particularly prove that the use of Na+ ions results in junctions yielding currents which are higher than with Cs+ ions. Current‐voltage and capacitance‐voltage characteristics have been presented so as to show that the junction effect is due to the efficiency of the doping by ionic implantation. These electrical measurements seem to be stable after several weeks in air.

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