Caractérisation d'un substrat semiconducteur par technique micro-onde et injection photonique

Orgeret, M.; Boucher, Jason W.

doi:10.1051/rphysap:0197800130102900

Cited by 13 publications

(4 citation statements)

References 15 publications

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“…There is a deviation between experimental and theoretical curves for frequencies higher than 50 kHz. This phenomenon was already observed by Orgeret and Boucher on silicon samples [11]. The harmonic model fails for such high frequencies.…”

Section: Resultssupporting

confidence: 63%

Lifetime Measurement in n-Type 4H-SiC by Mean of the Microwave Phase-Shift

Bérenguier¹,

Palais²,

Bertaina³

et al. 2016

MSF

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During the past years, our team developed an original lifetime measurement method for semiconductors wafers, called microwave phase-shift (µW-PS). It was successfully employed to determinate bulk lifetime and surface recombination velocities on silicon. We recently adapted the method to silicon carbide (SiC), using a continuous UV laser and acousto-optic modulator. The theory is presented, using the standard continuity equation in n-type 4H-SiC. The proposed measurement setup firstly allows to estimate a bulk lifetime ranging from 2.3 to 6.7 µs.

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Section: Resultssupporting

confidence: 63%

Lifetime Measurement in n-Type 4H-SiC by Mean of the Microwave Phase-Shift

Bérenguier¹,

Palais²,

Bertaina³

et al. 2016

MSF

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“…According to the Orgeret and Boucher theory [9], the general law for phase-shift technique can be expressed by the following equation:…”

Section: Microwave-based Minority Carrier Lifetime Measurements Technmentioning

confidence: 99%

“…The defect characterization in silicon wafers permits the identification of recombination centres (impurities, dislocations, grains boundaries etc.) [7][8][9]. This procedure allows us to establish a plan of action to reduce or eliminate recombinant-active defects, providing a reasonable start-point for solar cells process and performance optimization.…”

Section: Introductionmentioning

confidence: 99%

Is n-type multicrystalline silicon the best candidate for short-term high-efficiency lower-cost solar cells?

Ferreira¹,

Palais²,

Pasquinelli³

et al. 2010

REPQJ

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Abstract. In this article we detail a theoretical and experimental investigation in order to reveal the advantageous properties of multicrystalline n-type silicon for lower-cost highquality solar cells applications. In this study, electronic grade (EG) and compensated upgraded metallurgical grade (UMG) materials are analyzed. Three microwave-based contactless techniques (Microwave Photoconductivity Decay "µw-PCD", Microwave Phase-Shift "µw-PS" and Large-Scale Microwave Phase-Shift "LS-µw-PS") are applied to determine the carrier lifetime behaviour in an entire EG silicon ingot. We show that, at low injection conditions, the minority carrier lifetime profile is not directly related to resistivity variation along the ingot height. The carrier lifetime variation observed in all three techniques is related to Shockley-Read-Hall recombination process. In compensated UMG silicon a higher minority carrier lifetime is observed in n-type than p-type area at the same conditions of contamination and injection level.

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“…The relationship between phase shift φ and lifetime τ b as a function of S (of both surfaces) and of the excitation frequency is given by equation ( 15) of reference [16] and expression (3) of reference [17]. The phase shift φ is a function of several parameters:…”

Section: According To Equation (3) N Mmentioning

confidence: 99%

Contactless mapping of lifetime and diffusion length scan map of minority carriers in silicon wafers

Palais¹,

Gervais²,

Yakimov³

et al. 2000

Eur. Phys. J. AP

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The lifetime of minority carriers in crystalline silicon wafers is determined by means of the contactless microwave phase-shift technique, when the surfaces of the samples are passivated using an iodine aqueous solution of polyvidone. The stability of the passivation is sufficient in order to obtain a lifetime scan map with spatial resolution of 50 µm, using a thin coaxial cable which directs 9.4 GHz microwaves onto the investigated samples and a fiber coupled laser diode which generates carriers in excess. In gold contaminated single crystals an acceptable correlation is found between the lifetime scan maps and the local concentrations of gold determined by deep level transient spectroscopy applied to an array of aluminium silicon diodes. For multicrystalline silicon wafers containing large densities of different extended crystallographic defects, a good correlation is obtained between the lifetime maps and the diffusion length maps obtained by the light beam induced current technique. Both the maps display the same features of extended crystallographic defects and are in agreement with optical micrographs of the scanned samples after they have been chemically etched.

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Caractérisation d'un substrat semiconducteur par technique micro-onde et injection photonique

Cited by 13 publications

References 15 publications

Lifetime Measurement in n-Type 4H-SiC by Mean of the Microwave Phase-Shift

Lifetime Measurement in n-Type 4H-SiC by Mean of the Microwave Phase-Shift

Is n-type multicrystalline silicon the best candidate for short-term high-efficiency lower-cost solar cells?

Contactless mapping of lifetime and diffusion length scan map of minority carriers in silicon wafers

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