“…1 The conduction mechanism of the so-called high-j materials, materials with higher permittivity compared to SiO 2 , such as Al 2 O 3 , 2-4 SrTiO 3 , [5][6][7][8] or ZrO 2 , [9][10][11] were intensively investigated. Also metal-insulator-metal (MIM) devices for integrated capacitors (ICs) and random access memories (RAMs) based on high-j materials, e.g., BaTiO 3 , 12-16 (Ba, Sr)TiO 3 , [17][18][19] and TiO 2 , 20-23 were intensively studied in regard to their conduction mechanism.…”