Capacitor Property and Leakage Current Mechanism of ZrO₂Thin Dielectric Films Prepared by Anodic Oxidation

Difference in Thermal Degradation Behavior of ZrO2 and HfO2 Anodized Capacitors

“…However, as briefly mentioned in a previous paper, 7) the heat-resistance property of ZrO 2 anodized films is inferior to that of HfO 2 anodized films. In connection with this characteristic, we speculated, in a previous paper, 7) that since ZrO 2 anodized films are in a state of a small-grained mixed phase of monoclinic ZrO 2 and tetragonal ZrO 2 , dissimilar to HfO 2 anodized films which consist of only the small-grained monoclinic phase, it is expected that grain boundaries between monoclinic and tetragonal ZrO 2 contain a number of defects such as nonoxidized Zr atoms and nonstoichiometric Zr oxides. Then, if ZrO 2 anodized films are heat treated at high temperatures, it is assumed that the defect density in ZrO 2 anodized films increases with increasing heat treatment temperature.…”

“…In previous studies, 6,7) we investigated the electrical properties of anodized ZrO 2 and HfO 2 capacitors. It was revealed that both capacitors exhibit excellent properties such as a high capacitance density, a low dissipation factor (tan ) and a low leakage current before heat treatment.…”

Loss Properties of Anodized Thin-Film Capacitors Fabricated Using Hf-Doped Nb Alloy Films

“…%) described in Table I is somewhat larger than the critical value (0.01) required for its practical use as a low-loss capacitor. 16) Then, to confirm whether low-loss capacitors can be realized using this Nb-Hf (7 at. %) anodized film, the thickness dependence of capacitor properties was examined.…”

Electrical conduction mechanism in bulk ceramic insulators at high voltages until dielectric breakdown

“…1 The conduction mechanism of the so-called high-j materials, materials with higher permittivity compared to SiO 2 , such as Al 2 O 3 , 2-4 SrTiO 3 , [5][6][7][8] or ZrO 2 , [9][10][11] were intensively investigated. Also metal-insulator-metal (MIM) devices for integrated capacitors (ICs) and random access memories (RAMs) based on high-j materials, e.g., BaTiO 3 , 12-16 (Ba, Sr)TiO 3 , [17][18][19] and TiO 2 , 20-23 were intensively studied in regard to their conduction mechanism.…”