“…The data is fitted with straight line in these two regions and the obtained slope values are 1.10 ± 0.03 and 2.10 ± 0.03 for the low and high applied field regions respectively. These values indicate that Ohmic conduction and space charge limited conduction mechanisms are dominating conduction mechanism at low and high applied fields respectively similar to that of most of the polycrystalline ceramics[7,11,12].…”
mentioning
confidence: 82%
“…One can see that J-E curves exhibit good symmetry about positive and negative field values. Neusel et al, recently reported the Importance of the study of dielectric breakdown and various mechanisms contributing to it in bulk insulators especially metal oxide ceramics[7]. Further to get insight into the mechanisms that are contributing to the observed J-E data, the data is plotted in terms of ln(E) versus ln(J) as shown in the inset of figure-4.…”
“…The data is fitted with straight line in these two regions and the obtained slope values are 1.10 ± 0.03 and 2.10 ± 0.03 for the low and high applied field regions respectively. These values indicate that Ohmic conduction and space charge limited conduction mechanisms are dominating conduction mechanism at low and high applied fields respectively similar to that of most of the polycrystalline ceramics[7,11,12].…”
mentioning
confidence: 82%
“…One can see that J-E curves exhibit good symmetry about positive and negative field values. Neusel et al, recently reported the Importance of the study of dielectric breakdown and various mechanisms contributing to it in bulk insulators especially metal oxide ceramics[7]. Further to get insight into the mechanisms that are contributing to the observed J-E data, the data is plotted in terms of ln(E) versus ln(J) as shown in the inset of figure-4.…”
“…For the perfect alumina crystal, the electrical carriers are mainly the electrons in the conduction band and the holes in the valence band that are generated by the thermal excitation. When the electric field is high, space charge limited conduction is the dominant conduction mechanism [28,29]. In the thermal DB theory and the avalanche DB theory, the large current induced by the strong electric field can lead to more excited electrical carriers and subsequently the DB.…”
Section: Analyses On the Underlying Mechanisms Behind The Effects Omentioning
Annealing and firing in wet hydrogen are widely used steps in the processing alumina-ceramic insulators that may affect their dielectric breakdown strengths (DBS). In this study, the effects of annealing (at 1300 ℃ for 7 h) and firing in wet hydrogen on the DBS of alumina ceramics (all sintered at 1650 ℃) were studied, and the underlying mechanisms were analyzed by material characterizations. Annealing reduced the DBS of the 95% alumina ceramics due to the inter-granular phase crystallization, and the reduction in the DBS could be correlated to the reduction in mechanical strength. In contrast, annealing improved the DBS of the 99% alumina ceramic without intergranular phase transformation. Firing in wet hydrogen at 1500 ℃ caused the DBS increment, which can be ascribed to the reduction in the concentrations of point defects and electrical carriers.
“…A proportionality of dielectric strength to the −0.5 power of relative permittivity is shown by different groups of researchers [8,9]. Trapping of charges [10,11] and space charge limited conductivity [12][13][14] are recently discussed to be decisive for breakdown channel formation in ceramics.…”
Dielectric strength testing of ceramics can be performed with various setups and parameters. Comparisons of results from different sources are often not meaningful, because the results are strongly dependent on the actual testing procedure. The aim of this study is to quantify the influence of voltage ramp rate, electrode size, electrode conditioning, and sample thickness on the measured AC dielectric strength of a commercial alumina. Mean values, Weibull moduli, and failure probabilities determined in standardized short time tests are evaluated and related to withstand voltage tests. Dielectric strength values in the range from 21.6 to 33.2 kV•mm -1 were obtained for the same material using different testing procedures. Short time tests resulted in small standard deviations (< 2 kV•mm -1 ) and high Weibull moduli around 30, while withstand tests at voltage levels with low and virtual zero failure probability in short time tests resulted in large scatter of withstand time and Weibull moduli < 1. The strong decrease in Weibull moduli is attributed to progressive damage from partial discharge and depolarization during AC testing. These findings emphasize the necessity of a thorough documentation of testing procedure and highlight the importance of withstand voltage tests for a comprehensive material characterization.
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