Wireless Sensor Network (WSN) is one of the supporting technologies for the Internet of Things (IoT). However, a large-scale deployment of the WSN faces multifarious challenges. WSN node size and maintenance cost incurred by periodic energy source replacement are among them. From the perspectives of energy sources, these two challenges can be better addressed by Wireless Power Transfer (WPT) technologies in comparison with energy-scavengers or traditional energy-storages. Omnidirectional-Electro-Magnetic (EM)-Radiation WPT-technology appears to be a viable choice. Hence, this work proposes various circuit design techniques in developing the dedicated Power Management Integrated Circuit (PMIC) structures to facilitate implementation of such WPT technology. In detail, this thesis describes (i) a sub-1-V CMOS Voltage Reference (VR) with novel trimming networks, (ii) a Capacitor-Less (OCL) Low Drop-Out Voltage Regulator (LDO) with load-adaptive negative-resistance at the input stage of an Operational Transconductance Amplifier (OTA), and (iii) a compensator-less Square Root Voltage Mode (SRVM) controller for a Pulse Width Modulation (PWM) Discontinuous Current Mode (DCM) Boost DC-DC Converter. To elaborate, the trimming networks aim at minimizing Temperature Coefficient (TC) against process variations and the finite resistance of the CMOS trimming switches in a CMOS Voltage Reference (VR). The loadadaptive negative-resistance helps to boost the DC-gain of the proposed OCL-LDO while improving the current efficiency and ensuring fast-settling and frequency stability. Lastly, the compensator-less SRVM controller is designed to minimize power and area from the discrete compensator circuits in conventional DC-DC converters. Subsequently, structures of three key PMIC building blocks, such as a VR, an OCL-LDO and a boost DC-DC switching converter, are proposed with the aforementioned circuit design techniques. Trimming networks are proposed for a sub-1-volt CMOS VR implemented using the threshold-voltage-difference (ΔVth) approach. Fabricated in 0.18-μm CMOS-technology, the trimmed CMOS VR consumes 0.4 μA with a supply voltage of 0.7 V. A TC of 45 ppm/°C and a