Capacitive and resistive electronic components

Campbell, D. S.; Hayes, J. A.

doi:10.1016/0026-2714(95)90025-x

Cited by 3 publications

(4 citation statements)

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“…This drives the current flow in the opposite direction to return to the initial state. The surface energy states have the ability to store electrons, [27,28,31,32] which would clarify the capacitive model. The external voltage could shift the Fermi levels and change the surface states, therefore if the voltage is high enough, surface states are not able to trap or release the electrons (Note 18, Supporting Information).…”

Section: Doi: 101002/adma201907249mentioning

confidence: 99%

Alternating Current Photovoltaic Effect

et al. 2020

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It is well known that the photovoltaic effect produces a direct current (DC) under solar illumination owing to the directional separation of light‐excited charge carriers at the p–n junction, with holes flowing to the p‐side and electrons flowing to the n‐side. Here, it is found that apart from the DC generated by the conventional p–n photovoltaic effect, there is another new type of photovoltaic effect that generates alternating current (AC) in the nonequilibrium states when the illumination light periodically shines at the junction/interface of materials. The peak current of AC at high switching frequency can be much higher than that from DC. The AC cannot be explained by the established mechanisms for conventional photovoltaics; instead, it is suggested to be a result of the relative shift and realignment between the quasi‐Fermi levels of the semiconductors adjacent to the junction/interface under the nonequilibrium conditions, which results in electron flow in the external circuit back and forth to balance the potential difference between two electrodes. By virtue of this effect, the device can work as a high‐performance broadband photodetector with extremely high sensitivity under zero bias; it can also work as a remote power source providing extra power output in addition to the conventional photovoltaic effect.

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Section: Doi: 101002/adma201907249mentioning

confidence: 99%

Alternating Current Photovoltaic Effect

et al. 2020

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“…The capacitance microsensor is regarded as a dielectric capacitor when the heat pipe is full of water. There is no perfect dielectric material and the loss tangent, tan δ = 1/(ωRC), must be recognized [11]. This loss value is a direct expression of the existence of a resistance, R, associated with the capacitance, C. Therefore, the dielectric capacitor is modeled using the parallel model, in which C s is in parallel with R [12,13].…”

Section: Capacitance Sensor For Void Fraction Measurementsmentioning

confidence: 99%

Characterization of an integrated micro heat pipe

Lee

Wong

Zohar

2002

J. Micromech. Microeng.

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The characterization of a micro heat pipe system, integrated with a local heater, temperature and capacitive microsensors is presented. Two liquid charging schemes based on a single hole, requiring vacuum environment, and a pair of holes, utilizing capillary forces are compared. Taking advantage of the great disparity between the dielectric constants of liquids and gases, capacitance sensors are used for void fraction measurements. Since it is difficult to control the phase content of a liquid-gas mixture in a micro heat pipe, a calibration technique based on a traveling water-air interface due to evaporation is introduced. The integrated sensor capacitance for pure water is found to depend on measurement frequency, temperature and ion concentration, exhibiting trends that are different from previous reports. The measured temperature and void fraction distribution along the heat pipes are consistent with the two-phase flow patterns recorded during the microsystem operation.

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“…Coatings 2019, 9, x FOR PEER REVIEW 4 of 8 equivalent resistance in multilayer thin films is equal to that in each layer, which reduces the dielectric loss of multilayer thin films [31]. In general, the equivalent capacitor of multilayer structure thin films may be expressed by series capacitors [32][33][34]. For the εr value of multilayer thin films, the effective capacitor was constructed by three capacitors, include of top CBST, CBNF, and bottom CBST capacitors, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…In this work, the bismuth's volatilization was inhibited by BST layers, which makes the Bi/Fe ratio in preferable situation and brings down the defect rate of the film improved the remnant polarization and saturation polarization. In general, the equivalent capacitor of multilayer structure thin films may be expressed by series capacitors [32][33][34]. For the ε r value of multilayer thin films, the effective capacitor was constructed by three capacitors, include of top C BST , C BNF , and bottom C BST capacitors, respectively.…”

Section: Resultsmentioning

confidence: 99%

Low Dielectric Loss and Multiferroic Properties in Ferroelectric/Mutiferroic/Ferroelectric Sandwich Structured Thin Films

2019

Coatings

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Bismuth ferrite (BiFeO 3 ) has proven to be promising for a wide variety of microelectric and magnetoelectric devices applications. In this work, a dense (Ba 0.65 Sr 0.35 )TiO 3 (BST)/ (Bi 0.875 Nd 0.125 )FeO 3 (BNF)/BST trilayered thin film grown on Pt-coated Si (100) substrates was developed by the rf-sputtering. For comparison, single-layered BNF and BST were also prepared on the same substrates, respectively. The results show that the dielectric loses suppression in BST/BNF/BST trilayered thin films at room temperature but has enhanced ferromagnetic and ferroelectric properties. The remnant polarization (P r ) and coercive electronic field (E c ) were 5.51 µC/cm 2 and 18.3 kV/cm, and the remnant magnetization (M r ) and coercive magnetic field (H c ) were 10.1 emu/cm 3 and 351 Oe, respectively, for the trilayered film. We considered that the bismuth's volatilization was limited by BST bottom layers making the Bi/Fe in good station, and the action of BST layer in the charge transfer between BNF thin film and electrode led to the quite low leakage current and enhanced multiferroic property. The origin of the mechanism of the highly enhanced dielectric constant and decreased loss tanδ was discussed.Coatings 2019, 9, 502 2 of 8 fields [21,22]. The electric field control of magnetism requires deterministic control of the magnetic order, and the magnetoelectric coupling in multiferrous BiFeO 3 can be understood [23]. In addition, the others FE/MF heterostructured thin films and FE/MF(FE)/FE trilayered structural thin films were prepared [24][25][26][27], but these films still have a high leakage current density and a dissipation factor.In this work, Ba 0.65 Sr 0.35 TiO 3 , Bi 0.875 Nd 0.125 FeO 3 and Ba 0.65 Sr 0.35 TiO 3 -Bi 0.875 Nd 0.125 FeO 3 -Ba 0.65 Sr 0.35 TiO 3 thin films grown on Pt/Ti/SiO 2 /Si (100) substrates were prepared by radio frequency magnetron sputtering. The ferroelectric, ferromagnetic, and electrical properties of these film samples were investigated. The low dielectric loss, low leakage current density, and multiferroic properties enhancement mechanism of the sandwich structural thin films are also discussed.

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Capacitive and resistive electronic components

Cited by 3 publications

References 0 publications

Alternating Current Photovoltaic Effect

Alternating Current Photovoltaic Effect

Characterization of an integrated micro heat pipe

Low Dielectric Loss and Multiferroic Properties in Ferroelectric/Mutiferroic/Ferroelectric Sandwich Structured Thin Films

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