Capacitance-voltage characteristics of organic Schottky diode with and without deep traps

Abstract

Capacitance based spectroscopic techniques have been used to characterize defects in organic Schottky diode based on copper phthalocyanine. Deep traps in organic thin films introduced by varying growth conditions have been identified and characterized by voltage and temperature dependence of capacitance. These results are interpreted using a consistent modelling of capacitance of organic Schottky diode with and without deep traps.

The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes

“…The capacitance of a Schottky diode is characterised by the width of the depletion layer [30]. The intercept on the voltage axis gives the diffusion potential V bi which is used to determine the barrier height [24]: (5) where V 0 is the potential difference between the conduction band minima and the Fermi level in the neutral part of the semiconductor [31], and is given by:…”

The double Gaussian distribution of inhomogeneous barrier heights in the organic‐on‐inorganic Schottky devices

“…Nowadays, organic thin films and organic‐based hybrid structures have gradually rising application areas in various electronic devices, such as diodes 1–3, dye sensitized solar cells (DSSCs) 4, organic light emitting diodes (OLEDs) 5, 6, RFID tags 7 and xerography 8. Therefore, it would be quite important a better understanding of the metal–organic interface in the further development and improvement of organic and molecular electronics.…”

“…The most important feature characterizing a Schottky barrier is its barrier height Φ B . Recently, considerable attention has been focused on the barrier height inhomogeneity in the Schottky devices 1–28. Several methods and approximations have been proposed to explain the formation of barrier from different materials including inorganic and/or organic interfaces and also to specify the behaviour of barriers at different bias and environmental conditions.…”

Capacitance roll‐off and frequency‐dispersion capacitance–conductance phenomena in field plate and guard ring edge‐terminated Ni/SiO2/4H‐nSiC Schottky barrier diodes

“…At lower frequencies, all interface trap states have a long enough relaxation time to show resonance with the applied AC signal while at higher frequencies fewer of the interface trap states show resonance with the applied AC signal, and hence the capacitance shows lower values. The electrical response of interface trap states can be recognized by their respective positions in the bandgap of SiC, their densities, relaxation times, and their capture cross sections that can be estimated using conductance‐based method . This method mainly depends on the steady‐state losses caused by transferring charge carriers between the quasi‐Fermi level and interface trap states.…”

“…Also due to series resistance ( R s ), an interfacial oxide layer, and the N ss forward‐bias I–V characteristics shows nonlinearity on the semilogarithmic scale . Furthermore, in the past few years, many researchers have found anomalous peaks in the forward‐bias capacitance characteristics of SBD and elucidate them in terms of interface trap states ( N ss ), minority charge‐carrier injection; R s , etc. Also, there is a variety of hypothesis for anomalies in C–V characteristics of MS structures, but a general theory is not yet established .…”