Capacitance-voltage and retention characteristics of Pt/SrBi2Ta2O9/HfO2/Si structures with various buffer layer thickness

Tang, Minghua; Sun, Z. H.; Zhou, Yun; Sugiyama, Yoshihiro; Ishiwara, Hiroshi

doi:10.1063/1.3147859

Cited by 51 publications

(26 citation statements)

References 18 publications

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“…21 However, it is much shorter than those reported for other MFIS diodes, such as Pt/͑Bi,La͒ 4 Ti 3 O 12 /HfO 2 /Si, 22 Al/PZT/Y 2 O 3 /Si, 3 and Pt/ SrBi 2 Ta 2 O 9 /HfO 2 /Si. 23 The major reason can be attributed to the high remanent polarization ͑ P r ͒ of BFMO, 24 which results in the degradation in retention because of the generation of a high depolarization field. [25][26][27][28] Our work on lowering the P r of BiFeO 3 -based films under the condition of not affecting the coercive field greatly is in process.…”

Section: G44mentioning

confidence: 99%

The Ferroelectric and Charge Injection Effects of Metal–Ferroelectric (BiFe[sub 0.95]Mn[sub 0.05]O[sub 3])–Insulator (Bi[sub 2]Ti[sub 2]O[sub 7])–Silicon Capacitors

Yang

et al. 2010

Electrochem. Solid-State Lett.

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Metal-ferroelectric-insulator-silicon capacitors with a BiFe 0.95 Mn 0.05 O 3 ͑BFMO͒ ferroelectric film and a Bi 2 Ti 2 O 7 ͑BTO͒ insulator have been fabricated. The electrical properties of 300 nm thick BFMO were investigated for different BTO thicknesses. The experimental results show that BFMO/BTO ͑50 nm͒ exhibits the largest maximum memory window. Furthermore, the trapped and mobile positive charges initiate at Ϯ7 and Ϯ8 V, respectively. Compared with BFMO/BTO ͑30 nm͒ and BFMO/BTO ͑70 nm͒, the BFMO/BTO ͑50 nm͒ shows a relatively long retention time.The ferroelectric field-effect transistor with a metalferroelectric-insulator-silicon ͑MFIS͒ structure has emerged as promising nonvolatile memory with nondestructive readout capability. 1 The insertion of the insulator is purposed to prevent the interdiffusion and reaction between the ferroelectric film and Si substrate. Moreover, a proportionally larger voltage is expected to be applied across the ferroelectric film. 2 As in lead zirconate titanate ͑PZT͒ ͑290 nm͒/Y 2 O 3 ͑11.8 nm͒/Si, the distribution of the applied voltage for PZT is as large as 5.22 V at 8 V. 3 For PZT ͑230 nm͒/Dy 2 O 3 ͑20 nm͒, the ratio of the voltage drop across the ferroelectric and insulator is only 1:3. 4 The voltage across the ferroelectric layer in PZT ͑160 nm͒/La 2 O 3 ͑16 nm͒ is also one-fourth of the total applied voltage. 5 These researches show that selecting a high-k and thinner insulating layer is necessary to guarantee a larger electric field across the ferroelectric layer.Because of that, the BiFeO 3 -based films have a low crystallization temperature, a large coercive voltage, and a small dielectric constant; the BiFeO 3 -based MFIS structures have begun to be studied. 6-8 However, the effect of the insulator thickness on memory properties of the MFIS capacitor has rarely been reported. In addition, compared with other ferroelectric films, such as PZT, ͑Bi,La͒ 4 Ti 3 O 12 , and SrBi 2 Ta 2 O 9 , the BiFeO 3 -based film has a larger coercive field, which needs a larger distributed voltage across the ferroelectric film to ensure polarization switching. Therefore, to operate at a low voltage with a saturated electric field applied to the BiFeO 3 -based film, optimization of the buffer layer capacitance is important in MFIS configurations. 4 The Bi 2 Ti 2 O 7 ͑BTO͒ film has a high dielectric constant and a low leakage current density. 8 It has been successfully used as an effective diffusion barrier between the ferroelectric film and the Si substrate. 9,10 In this work, the electrical properties of BiFe 0.95 Mn 0.05 O 3 ͑BFMO͒ ferroelectric film deposited on the BTO insulator of various thicknesses are investigated. The results demonstrate that the Au/BFMO ͑300 nm͒/BTO ͑50 nm͒/Si shows relatively better memory characteristics than the reported BiFeO 3 -based MFIS structures. ExperimentalDifferent from the previous synthesis of the BTO buffer layer, 11 we modified the preparation process. Bismuth nitrate Bi͑NO 3 ͒ 3 ·5H 2 O and titanium isopropoxide Ti͓OCH͑CH 3 ͒ 2 ͔ 4 were selecte...

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Section: G44mentioning

confidence: 99%

The Ferroelectric and Charge Injection Effects of Metal–Ferroelectric (BiFe[sub 0.95]Mn[sub 0.05]O[sub 3])–Insulator (Bi[sub 2]Ti[sub 2]O[sub 7])–Silicon Capacitors

Yang

et al. 2010

Electrochem. Solid-State Lett.

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“…Among these materials, STO perovskite oxide is one of the best candidate materials for the insulating buffer layer because of its excellent barrier property, good thermal stability, low leakage current, and high dielectric constant. On the other hand, a wide class of ferroelectric materials such as SrBi 2 Ta 2 O 9 , YMnO 3 , BaTiO 3 (BTO), PbZrTiO 3 , and Bi 2 VO 5.5 has been studied concurrently with the insulating buffer layers [10][11][12][13][14]. When their properties are compared, the BTO perovskite oxide has many advantages over other ferroelectric materials, including low crystallization temperature, high fatigue endurance, good compatibility with integrated circuits, and low environmental load [15].…”

Section: Introductionmentioning

confidence: 98%

Enhanced memory window of Au/BaTiO3/SrTiO3/Si(001) MFIS structure with high c-axis orientation for non-volatile memory applications

2012

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Metal-ferroelectric-insulator-semiconductor (MFIS) structures with BaTiO 3 (BTO) as a ferroelectric film and SrTiO 3 (STO) as an insulating buffer layer were fabricated on p-type Si(001) substrates using an ion beam sputter deposition technique. The effect of out-of-plane orientation on the electrical properties of the MFIS structures, including leakage current density and memory window behavior, were studied using the growth of the BTO ferroelectric film on Si substrate buffered by highly c-axis-oriented and randomoriented STO buffer layers. The experimental results show that the out-of-plane orientations of the BTO films were almost identical to those of the STO buffer layers. The MFIS structure with a high c-axis orientation exhibited a maximum clockwise capacitance-voltage memory window of 1.17 V with a low leakage current of 1.05 × 10 −7 A/cm 2 at an applied voltage of 4 V, which is a significant improvement compared to the MFIS structure with a random orientation. The difference in the electrical properties of the MFIS structures with both types of orientation is discussed in detail. The results obtained from this study indicate that

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“…Even so, high quality MFIS FETs with good retention properties have been found arduous to fabricate because of the difficulty in selecting appropriate ferroelectric and dielectric materials [8], [9]. Y 2 O 3 -stabilized ZrO 2 (YSZ) and HfO 2 seem to be very promising as the insulating buffers in MFIS structures due to their high dielectric constant, wide band gap and good thermal stability as well as large band offset in contact with Si [3], [5]. Bi 3.15 Nd 0.85 Ti 3 O 12 (BNT) and SiBi 2 Ta 2 O 9 (SBT) films are promising lead-free ferroelectric due to its large remnant polarization, excellent fatigue-free nature and low processing temperature [10], [11].…”

Section: Introductionmentioning

confidence: 99%

“…Ferroelectric field effect transistor (FFET) with a metal-ferroelectric-insulator-silicon (MFIS) structure is a promising candidate for nonvolatile random access memory because of its high speed, single device structure, low power consumption, and nondestructive read-out operation [1]- [5]. In the case of MFIS structure, a very thin insulating layer, namely buffer layer, is expected to prevent the chemical reaction and/or inter-diffusion between the ferroelectric film and silicon substrate, and thus improve the interface properties and the retention properties [6,7].…”

Section: Introductionmentioning

confidence: 99%

High-κ Insulator Thin Films and Retention Properties of MFIS Diodes

Zhou

2011

MRS Proc.

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Ferroelectric field effect transistor (FFET) is a promising candidate for non-volatile random access memory because of its high speed, single device structure, low power consumption, and nondestructive read-out operation. Currently, however, such ideal devices are commercially not available due to poor interface properties between ferroelectric film and Si substrate, such as leakage current and interdiffusion etc. So we choose YSZ and HfO 2 insulating thin films as buffer layer due to they possess relatively high dielectric constant, high thermal stability, low leakage current, and good interface property with Si substrates. Two structural diodes of Pt/BNT/YSZ/Si and Pt/SBT/HfO 2 /Si were fabricated, and the microstructures, interface properties, C-V, I-V, and retention properties were investigated in detail. Experimental results show that the fabricated diodes exhibit excellent long-term retention properties, which is due to the good interface and the low leakage density, demonstrating that the YSZ and HfO 2 buffer layers are playing a critical modulation role between the ferroelectric thin film and Si substrate.

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Capacitance-voltage and retention characteristics of Pt/SrBi2Ta2O9/HfO2/Si structures with various buffer layer thickness

Cited by 51 publications

References 18 publications

The Ferroelectric and Charge Injection Effects of Metal–Ferroelectric (BiFe[sub 0.95]Mn[sub 0.05]O[sub 3])–Insulator (Bi[sub 2]Ti[sub 2]O[sub 7])–Silicon Capacitors

The Ferroelectric and Charge Injection Effects of Metal–Ferroelectric (BiFe[sub 0.95]Mn[sub 0.05]O[sub 3])–Insulator (Bi[sub 2]Ti[sub 2]O[sub 7])–Silicon Capacitors

Enhanced memory window of Au/BaTiO3/SrTiO3/Si(001) MFIS structure with high c-axis orientation for non-volatile memory applications

High-κ Insulator Thin Films and Retention Properties of MFIS Diodes

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