Capacitance of semiconductor p-n junction space-charge layers: an overview

Liou, Juin J.; Lindholm, F.A.

doi:10.1109/5.90112

Cited by 14 publications

(4 citation statements)

References 46 publications

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“…since the n-Sub doping concentration N d ≫ p + S/D doping concentration. V R is the reverse bias of the p + S/D to n-Sub junction, and is equal to the substrate voltage V sub [31]. Accordingly, the p-n junction capacitance (per unit area) is given by…”

Section: Junction Capacitormentioning

confidence: 99%

Silicon electro-optic micro-modulator fabricated in standard CMOS technology as components for all silicon monolithic integrated optoelectronic systems ^*

2021

J. Micromech. Microeng.

349

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In this paper, optoelectronic characteristics and related switching behavior of one monolithically integrated silicon light-emitting device (LED) with an interesting wavelength range of 400–900 nm are studied. Through the comparison of two types of geometry, Si avalanche-based LED and Si field-effect LED (Si FE LED), in the same device, we establish the dimensional dependence of the switching speed of the LED. Almost-linear modulation curve implies lower distortion is shown for the Si FE LED with light emission enhancement, and technology computer aided design (TCAD) simulations are in line with the experimental results. Our findings indicate that ON–OFF keying up to GHz frequencies should be feasible with such diodes. Potential applications should include Si FE LED integrated into the micro-photonic systems.

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Section: Junction Capacitormentioning

confidence: 99%

Silicon electro-optic micro-modulator fabricated in standard CMOS technology as components for all silicon monolithic integrated optoelectronic systems ^*

2021

J. Micromech. Microeng.

349

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“…General expressions for a capacitance of a p-n junction were widely discussed in the literature [13]. Usually, the capacitance of the junction is expressed as a sum of the depletion capacitance C depl and the diffusion capacitance C diff introduced by minority carriers outside the depletion layer; thus, C = C diff + C depl .…”

Section: A Capacitance Of the P-n Junctionmentioning

confidence: 99%

“…To check the influence of the n-side layers on the accuracy of the method described above [see (13)], we evaluated N sh and N T based on p LS and p REL obtained for both doping of CdS. The results are shown in Table I.…”

Section: A Influence Of the N-side Doping On Extracted Concentrationmentioning

confidence: 99%

“…This voltage can be estimated around 0.3-0.4 V for standard parameters of the solar cell. Since modeling and interpretation of the diffusion capacitance is not straightforward (see [13], [16], and [17]), in the following, we focus on profiles obtained for negative biases, leaving the forward bias regime for future investigations. If not stated otherwise, all simulations in further sections were restricted to the voltage range from −2 to 0.3 V.…”

Section: B Capacitance-voltage Profiles For Forward Biasesmentioning

confidence: 99%

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The Influence of the n-Side Doping on Metastable Defect Concentrations in Cu(In,Ga)Se<sub>2</sub> Evaluated From Space Charge Profiles

Maciaszek

Zabierowski

2015

IEEE J. Photovoltaics

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In this study, we investigate, through numerical simulations, the influence of the n-side of the Cu(In,Ga)Se 2 (CIGS)based photovoltaic devices on capacitance space charge profiles, with a special emphasis on evaluating metastable defect concentrations. We calculated that for plausible doping level of the CdS buffer ranging from 10 16 to 10 18 cm −3 , the values of hole concentrations in the absorber delivered by capacitance can be underestimated, and the ZnO/CdS/CIGS devices should not be treated a priori as n + -p junctions. We showed how this effect can influence the values of metastable defect concentrations extracted from capacitance-voltage (CV) profiles. We indicated that the apparent nonuniformity of experimental CV profiles might be due to an incomplete depletion of the buffer layer. Based on our results, we proposed experiments that can help unveil the correct shallow acceptor and metastable defect concentration in CIGS.

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Theoretical Study of Forward-Voltage Heterojunction Space-Charge-Region Capacitance Including Interface-State Effects

Liou

1989

Phys. Stat. Sol. (a)

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The potential barrier heights, thickness, and capacitance of abrupt heterojunction space‐charge regions under forward voltages are treated analytically, and a model for this is developed. Physical effects such as free‐carrier charges and interface states in the heterojunction space‐charge region are considered. Comparison of the present model and other models for a Gaas/Si heterojunction diode is included. Experimental aspects regarding the heterojunction capacitance are also briefly discussed.

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Capacitance of semiconductor p-n junction space-charge layers: an overview

Cited by 14 publications

References 46 publications

Silicon electro-optic micro-modulator fabricated in standard CMOS technology as components for all silicon monolithic integrated optoelectronic systems ^*

Silicon electro-optic micro-modulator fabricated in standard CMOS technology as components for all silicon monolithic integrated optoelectronic systems ^*

The Influence of the n-Side Doping on Metastable Defect Concentrations in Cu(In,Ga)Se<sub>2</sub> Evaluated From Space Charge Profiles

Theoretical Study of Forward-Voltage Heterojunction Space-Charge-Region Capacitance Including Interface-State Effects

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Capacitance of semiconductor p-n junction space-charge layers: an overview

Cited by 14 publications

References 46 publications

Silicon electro-optic micro-modulator fabricated in standard CMOS technology as components for all silicon monolithic integrated optoelectronic systems *

Silicon electro-optic micro-modulator fabricated in standard CMOS technology as components for all silicon monolithic integrated optoelectronic systems *

The Influence of the n-Side Doping on Metastable Defect Concentrations in Cu(In,Ga)Se<sub>2</sub> Evaluated From Space Charge Profiles

Theoretical Study of Forward-Voltage Heterojunction Space-Charge-Region Capacitance Including Interface-State Effects

Contact Info

Product

Resources

About

Silicon electro-optic micro-modulator fabricated in standard CMOS technology as components for all silicon monolithic integrated optoelectronic systems ^*

Silicon electro-optic micro-modulator fabricated in standard CMOS technology as components for all silicon monolithic integrated optoelectronic systems ^*