Can Nitride Perovskites Provide the Same Superior Optoelectronic Properties as Lead Halide Perovskites?

Abstract

Halide perovskites represented by lead halide perovskites have emerged as a class of star materials for optoelectronic applications, particularly for solar cells, due to their superior optoelectronic properties. Recently, nitride perovskites represented by LaWN3 have also emerged and attracted increasing attention from the optoelectronic community. So the question is can nitride perovskites provide the same superior optoelectronic properties as lead halide perovskites? In this work, we theoretically evaluate the optoelectronic properties of nitride perovskites, along with a comparison with lead halide perovskites. We found that, unlike lead halide perovskites, nitride perovskites generally exhibit large hole and electron effective masses, not-too-high optical absorption coefficients, and dominant defects with deep states in the bandgap. Our results suggest that nitride perovskites can hardly provide the same superior optoelectronic properties as lead halide perovskites and thus should not be considered for high-performance optoelectronic applications such as solar cells.

Epitaxial Growth of MgGa2O4/CsPbBr3 Heterostructure with Controlled Defect Tolerance for Dynamic Photoluminescence

“…However, the unavoidable deep defects such as interstitial and antisite defects as carrier traps can lead to non‐radiative recombination, weakening the photoluminescence quantum yields (PLQYs) of LHPs, which is also detrimental to dynamic PL. [ 18 ] Accordingly, the defect tolerance of LHPs needs to be improved to ensure sufficient shallow defects to serve dynamic PL, and the most effective route is to remove or change harmful deep defects into shallow defects. [ 19–21 ]…”

Efficiency enhancement to 24.62% in inverted perovskite solar cells through poly (ionic liquid) bulk modification

“…Long-term operational stability was a crucial parameter reflecting the comprehensive performance of PSCs [46,47] . To evaluate the stability of encapsulated devices, we exposed them to continuous illumination at the MPP under air environment (Fig.…”

Technology and Integration Roadmap for Optoelectronic Memristor

“…Although using self-powered photodetectors as artificial neurons and optoelectronic devices as artificial synapses guarantees that the bio-inspired retina system can be scaled up to a crossbar array structure for a high-density, low-powerconsumption neural network, this design choice has the potential to slow down processing speeds and increase overall system power consumption. [28,185,188,189] Integrating silicon solar cells and halide perovskite memristors into a modified structure of ITO/CsPbBr 2 I/poly(3-hexylthiophene) (P3HT)/Ag, Yang et al [29] reported a self-powered artificial retina system with improved recognition rate, boosted recognition speed, and reduced energy consumption to fulfill partial functions of CNNs (Figure 9g,h). [190] The mentioned autonomous artificial retina system has the potential to significantly advance machine learning and artificial intelligence.…”